Si4834CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
a, e
V (V) R () Q (Typ.)
DS DS(on) I (A) g
D
Definition
0.020 at V = 10 V 8.0
GS TrenchFET Power MOSFET
Channel-1 30 7.3
0.025 at V = 4.5 V 8.0
100 % R Tested
GS
g
0.020 at V = 10 V 8.0
100 % UIS Tested
GS
Channel-2 30 7.3
0.025 at V = 4.5 V 8.0
Compliant to RoHS Directive 2002/95/EC
GS
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
Notebook Logic dc-to-dc
V (V)
SD
a
Low Current dc-to-dc
V (V) I (A)
DS Diode Forward Voltage F
D D
1 2
30 0.51 V at 1.0 A 2.0
SO-8
S D
1 1 8 1
Schottky
G D
1 2 7 1
G G
1 Diode
2
S D
2 3 6 2
G D
4 5
2 2
Top View
S
S
1
2
Ordering Information: Si4834CDY-T1-E3 (Lead (Pb)-free)
Si4834CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted
A
Parameter Symbol Channel-1Channel-2Unit
Drain-Source Voltage V
30 30
DS
V
Gate-Source Voltage V 20 20
GS
e e
T = 25 C
C 8.0 8.0
T = 70 C
7.1 7.1
C
Continuous Drain Current (T = 150 C) I
J D
b, c b, c
T = 25 C
A 7.5 7.5
b, c b, c
T = 70 C
A 5.8 5.8
I
Pulsed Drain Current (10 s Pulse Width) 30 30 A
DM
T = 25 C 2.6 2.6
C
I
Source-Drain Current Diode Current
S
b, c b, c
T = 25 C
A 1.8 1.8
I
Pulsed Source-Drain Current 30 30
SM
I 10 10
Single Pulse Avalanche Current
AS
L = 0.1 mH
E mJ
Single Pulse Avalanche Energy 55
AS
T = 25 C
2.9 2.9
C
T = 70 C 1.8 1.8
C
P
Maximum Power Dissipation W
D
b, c b, c
T = 25 C
A 2 2
b, c b, c
T = 70 C
A
1.2 1.2
T , T
Operating Junction and Storage Temperature Range - 55 to 150 C
J stg
THERMAL RESISTANCE RATINGS
Channel-1 Channel-2
Parameter Symbol Typ. Max. Typ. Max. Unit
b, d
R
t 10 s 52 62.5 52 62.5
Maximum Junction-to-Ambient thJA
C/W
R
Maximum Junction-to-Foot (Drain) Steady State 35 43 35 43
thJF
Notes:
a. Based on T = 25 C.
C
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 C/W (Channel-1) and 110 C/W (Channel-2).
e. Package limited.
Document Number: 68790 www.vishay.com
S09-2109-Rev. B, 12-Oct-09 1Si4834CDY
Vishay Siliconix
SPECIFICATIONS T = 25 C, unless otherwise noted
J
a
Typ.
Parameter Symbol Test Conditions Min. Max. Unit
Static
V = 0 V, I = 1 mA Ch-1 30
GS D
V
Drain-Source Breakdown Voltage V
DS
V = 0 V, I = 1 mA
Ch-2 30
GS D
V Temperature Coefficient V /T I = 250 A Ch-2 32
DS DS J D
mV/C
V Temperature Coefficient V /T I = 250 A
Ch-2 - 6
GS(th) GS(th) J D
V = V , I = 1 mA
Ch-1 1 3
DS GS D
V
Gate Threshold Voltage V
GS(th)
V = V , I = 1 mA
Ch-2 1 3
DS GS D
V = 0 V, V = 20 V
Ch-1 100
DS GS
I
Gate-Body Leakage nA
GSS
V = 0 V, V = 20 V
Ch-2 100
DS GS
V = 30 V, V = 0 V
Ch-1 0.016 0.10
DS GS
V = 30 V, V = 0 V Ch-2 0.001
DS GS
Zero Gate Voltage Drain Current I mA
DSS
V = 30 V, V = 0 V, T = 100 C
Ch-1 1.1 10
DS GS J
V = 30 V, V = 0 V, T = 100 C Ch-2 0.025
DS GS J
V = 5 V, V = 10 V
Ch-1 20
DS GS
b
I
A
On-State Drain Current D(on)
V = 5 V, V = 10 V Ch-2 20
DS GS
V = 10 V, I = 8 A
Ch-1 0.0156 0.020
GS D
V = 10 V, I = 8 A Ch-2 0.0156 0.020
GS D
b
R
Drain-Source On-State Resistance DS(on)
V = 4.5 V, I = 5 A
Ch-1 0.019 0.025
GS D
V = 4.5 V, I = 5 A Ch-2 0.019 0.025
GS D
V = 15 V, I = 8 A
Ch-1 29
DS D
b
g S
Forward Transconductance fs
V = 15 V, I = 8 A
Ch-2 29
DS D
a
Dynamic
Ch-1 950
C
Input Capacitance
iss
Channel-1
Ch-2 950
V = 15 V, V = 0 V, f = 1 MHz
DS GS
Ch-1 185
C
Output Capacitance pF
oss
Ch-2 155
Channel-2
Ch-1 65
V = 15 V, V = 0 V, f = 1 MHz
DS GS
C
Reverse Transfer Capacitance
rss
Ch-2 65
V = 15 V, V = 10 V, I = 8 A
Ch-1 16.5 25
DS GS D
V = 15 V, V = 10 V, I = 8 A Ch-2 16.5 25
DS GS D
Q
Total Gate Charge
g
Ch-1 7.3 11
Channel-1
Ch-2 7.3 11
nC
V = 15 V, V = 4.5 V, I = 8 A
DS GS D
Ch-1 2.7
Q
Gate-Source Charge
gs
Ch-2 2.7
Channel-2
Ch-1 2.1
V = 15 V, V = 4.5 V, I = 8 A
DS GS D
Q
Gate-Drain Charge
gd
Ch-2 2.1
Ch-1 0.2 1.2 2.4
R
Gate Resistance f = 1 MHz
g
Ch-2 0.2 1.2 2.4
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 s, duty cycle 2 %.
www.vishay.com Document Number: 68790
2 S09-2109-Rev. B, 12-Oct-09