X-On Electronics has gained recognition as a prominent supplier of SI4943BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4943BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4943BDY-T1-E3 Vishay

SI4943BDY-T1-E3 electronic component of Vishay
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Part No.SI4943BDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 8.4A 2W
Datasheet: SI4943BDY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.859 ea
Line Total: USD 1.86 
Availability - 41160
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41160
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.859
10 : USD 1.507
100 : USD 1.122
500 : USD 0.9581
1000 : USD 0.9493
2500 : USD 0.9229
5000 : USD 0.9207
10000 : USD 0.9031

   
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We are delighted to provide the SI4943BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4943BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI4943BDY-T1-E3 is a small-signal MOSFET transistor from Vishay Semiconductor. The device features a 300 mA, 175 V drain-source breakdown voltage and a maximum drain current of 300 mA. It is a N-channel enhancement mode that is designed to operate under high temperature and low power requirements. The device has a package type of SOT-23, and its maximum drain-source on-state resistance is 20.5 Ohm. The device is ideal for low voltage and high speed applications, such as in power management, power supplies, and motor control applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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