New Product Si5432DC Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.020 at V = 4.5 V 6 RoHS GS 20 10 nC COMPLIANT APPLICATIONS 0.025 at V = 2.5 V 6 GS Load Switches for Portable Devices TM 1206-8 ChipFET 1 D D D D D D D G G S S Bottom View Ordering Information: N-Channel MOSFET Si5432DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS a T = 25 C C 6 a T = 70 C 6 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 6 A a, b, c T = 70 C A 6 A Pulsed Drain Current I 30 DM 5.2 T = 25 C C Continuous Source-Drain Diode Current I S b, c T = 25 C 2.1 A T = 25 C 6.3 C T = 70 C 4 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c, d t 5 s R 40 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 15 20 thJF Notes: a. Package limited, T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 95 C/W. e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68925 www.vishay.com S-82293-Rev. A, 22-Sep-08 1New Product Si5432DC Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A D mV/C V Temperature Coefficient V /T - 4.0 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.3 A 0.016 0.020 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 4.5 A 0.020 0.025 GS D a g V = 10 V, I = 8.3 A 45 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1200 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 220 pF oss DS GS C Reverse Transfer Capacitance 100 rss V = 10 V, V = 10 V, I = 8.3 A 22 33 DS GS D Q Total Gate Charge g 10 15 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 8.3 A 2.5 gs DS GS D Q Gate-Drain Charge 1.7 gd Gate Resistance R f = 1 MHz 2.4 g t Turn-on Delay Time 15 25 d(on) Rise Time t 10 15 V = 10 V, R = 1.5 r DD L I 6.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) Fall Time t 12 20 f ns t Turn-on Delay Time 10 15 d(on) Rise Time t 12 20 V = 10 V, R = 1.5 r DD L I 6.7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.2 S C A I Pulse Diode Forward Current 30 SM V I = 6.7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = 6.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68925 2 S-82293-Rev. A, 22-Sep-08