Si4778DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Available a 0.023 at V = 10 V TrenchFET Power MOSFET GS 8 25 5.5 nC 100 % R and UIS Tested a 0.028 at V = 4.5 V g GS 8 APPLICATIONS DC/DC Converter Gaming Notebook System Power SO-8 D S 1 8 D 2 7 S D 3 6 S D G 4 5 D G Top View S Ordering Information: Si4778DY-T1-E3 (Lead (Pb)-free) Si4778DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 25 DS V Gate-Source Voltage V 16 GS a T = 25 C 8 C a T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 8 b, c T = 70 C A 6.4 A I Pulsed Drain Current 30 DM T = 25 C 4.2 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2 I Single Pulse Avalanche Current 5 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 1.25 AS T = 25 C 5 C T = 70 C 3.2 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.5 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 42 53 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 69817 www.vishay.com S09-0394-Rev. B, 09-Mar-09 1Si4778DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.2 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7 A 0.019 0.023 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.3 A 0.023 0.028 GS D a g V = 10 V, I = 7 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 680 iss C V = 13 V, V = 0 V, f = 1 MHz Output Capacitance 120 pF oss DS GS C Reverse Transfer Capacitance 55 rss V = 13 V, V = 10 V, I = 7 A 12 18 DS GS D Q Total Gate Charge g 5.5 8.5 nC Q Gate-Source Charge V = 13 V, V = 4.5 V, I = 7 A 2 gs DS GS D Q Gate-Drain Charge 1.5 gd Gate Resistance R f = 1 MHz 2.5 3.8 g t Turn-On Delay Time 15 25 d(on) Rise Time t 50 75 V = 13 V, R = 2.3 r DD L I 5.6 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 12 20 V = 13 V, R = 2.3 r DD L I 5.6 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.3 S C A I Pulse Diode Forward Current 30 SM V I = 5.6 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 816 nC rr I = 5.6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8.5 a ns t Reverse Recovery Rise Time 6.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69817 2 S09-0394-Rev. B, 09-Mar-09