Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.016 at V = 10 V 9.5 GS LITTLE FOOT Plus Power MOSFET 30 0.021 at V = 4.5 V 7.7 GS 100 % R Tested g SCHOTTKY PRODUCT SUMMARY V (V) SD V (V) I (A) Diode Forward Voltage DS F 30 0.50 V at 1.0 A 1.4 SO-8 D S 1 8 D S D 2 7 S 3 6 D Schottky Diode G D 4 5 G N-channel MOSFET T op V i e w Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free) S Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Limit Parameter Symbol Unit 10 s Steady State Drain-Source Voltage (MOSFET) 30 V DS Reverse Voltage (Schottky) 30 V V Gate-Source Voltage (MOSFET) 20 GS T = 25 C 9.5 7.3 A a, b I Continuous Drain Current (T = 150 C) (MOSFET) D J T = 70 C 7.7 5.9 A I Pulsed Drain Current (MOSFET) 50 DM a, b I 2.1 1.2 A Continuous Source Current (MOSFET Diode Conduction) S I Average Forward Current (Schottky) 1.4 0.8 F Pulsed Forward Current (Schottky) I 30 FM Single Pulse Avalanche Current I 5 AS L = 0.1 mH E Avalanche Energy 1.25 mJ AS T = 25 C 2.5 1.4 A a, b Maximum Power Dissipation (MOSFET) T = 70 C 1.6 0.9 A P W D T = 25 C 2.0 1.2 A a, b Maximum Power Dissipation (Schottky) T = 70 C 1.3 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter DeviceSymbol TypicalMaximumUnit MOSFET 40 50 a Maximum Junction-to-Ambient (t 10 s) Schottky 50 60 R thJA MOSFET 72 90 a C/W Maximum Junction-to-Ambient (t = Steady State) Schottky 85 100 MOSFET 18 23 a R Maximum Junction-to-Foot (t = Steady State) thJF Schottky 24 30 Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 73038 www.vishay.com S-83039-Rev. D, 29-Dec-08 1Si4812BDY Vishay Siliconix MOSFET AND SCHOTTKY SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.004 0.100 DS GS Zero Gate Voltage Drain Current I V = 30 V, V = 0 V, T = 100 C 0.7 10 mA DSS DS GS J (MOSFET and Schottky) V = 30 V, V = 0 V, T = 125 C 3.0 20 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 9.5 A 0.013 0.016 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7.7 A 0.0165 0.021 GS D a g V = 15 V, I = 9.5 A 45 S Forward Transconductance fs DS D I = 1.0 A, V = 0 V 0.45 0.50 S GS a V V Schottky Diode Forward Voltage SD I = 1.0 A, V = 0 V, T = 125 C 0.33 0.42 S GS J b Dynamic Q Total Gate Charge 8.5 13 g Q V = 15 V, V = 5 V, I = 9.5 A Gate-Source Charge 3 nC gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance 0.3 0.7 1.1 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 15 13 20 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 20 30 ns d(off) t Fall Time 815 f t I = 1.0 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 22 35 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73038 2 S-83039-Rev. D, 29-Dec-08