Si4864DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0035 at V = 4.5 V 25 GS TrenchFET Power MOSFETs: 2.5 V Rated 20 0.0047 at V = 2.5 V 20 GS Low 3.5 m R DS(on) PWM (Q and R ) Optimized gd g APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4864DY-T1-E3 (Lead (Pb)-free) Si4864DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V 20 Drain-Source Voltage DS V V Gate-Source Voltage 8 GS T = 25 C 25 17 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 20 13 A A Pulsed Drain Current (10 s Pulse Width) I 60 DM a I 2.9 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.5 1.6 A a P W Maximum Power Dissipation D T = 70 C 2.2 1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 29 35 a R Maximum Junction-to-Ambient thJA Steady State 67 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 13 16 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71449 www.vishay.com S09-0221-Rev. C, 09-Feb-09 1Si4864DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 2 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 25 A 0.0028 0.0035 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 20 A 0.0038 0.0047 GS D a g V = 6 V, I = 25 A 70 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.70 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 47 70 g Q V = 10 V, V = 4.5 V, I = 25 A Gate-Source Charge 10 nC gs DS GS D Gate-Drain Charge Q 13.4 gd R Gate Resistance 0.5 1.5 2.6 g Turn-On Delay Time t 40 60 d(on) t Rise Time V = 10 V, R = 10 44 65 r DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 150 240 ns D GEN g d(off) t Fall Time 72 110 f Source-Drain Reverse Recovery Time t I = 2.9 A, dI/dt = 100 A/s 57 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 5 V thru 2.5 V GS 2 V 50 50 40 40 30 30 20 20 T = 125 C C 10 10 25 C - 55 C 0 0 012345 0.0 0.5 1.0 1.5 2.0 2.5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71449 2 S09-0221-Rev. C, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D