X-On Electronics has gained recognition as a prominent supplier of NID9N05BCLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NID9N05BCLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NID9N05BCLT4G ON Semiconductor

NID9N05BCLT4G electronic component of ON Semiconductor
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Part No.NID9N05BCLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 9 A, 52 V, N-CHANNEL, LOGIC LEVEL CLAMPED MOSFET W/ESD PROTECTION
Datasheet: NID9N05BCLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.7444
10 : USD 1.0389
100 : USD 0.785
500 : USD 0.6669
1000 : USD 0.5478
2500 : USD 0.5302
5000 : USD 0.5136
N/A

Obsolete
   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NID9N05BCLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NID9N05BCLT4G and other electronic components in the MOSFETs category and beyond.

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NID9N05ACL, NID9N05BCL Power MOSFET 9.0 A, 52 V, NChannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package www.onsemi.com Benefits V I MAX DSS D High Energy Capability for Inductive Loads (Clamped) R TYP (Limited) DS(ON) Low Switching Noise Generation 52 V 90 m 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection HBM 5000 V Active OverVoltage Gate to Drain Clamp M PWR Scalable to Lower or Higher R Overvoltage DS(on) Gate Protection Internal Series Gate Resistance (Pin 1) R G AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS ESD Protection Compliant Applications Source Automotive and Industrial Markets: (Pin 3) Solenoid Drivers, Lamp Drivers, Small Motor Drivers MARKING MAXIMUM RATINGS (T = 25C unless otherwise noted) J DIAGRAM Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 5259 V DSS 1 YWW GatetoSource Voltage Continuous V 15 V D9N GS 2 4 DPAK xxxxxG Drain Current Continuous T = 25C I 9.0 A CASE 369C A D 3 Drain Current Single Pulse (t = 10 s) I 35 DM STYLE 2 p Total Power Dissipation T = 25C P 1.74 W A D Y = Year 1 = Gate Operating and Storage Temperature Range T , T 55 to 175 C J stg WW = Work Week 2 = Drain xxxxx = 05ACL or 05BCL 3 = Source Single Pulse DraintoSource Avalanche E 160 mJ AS Energy Starting T = 125C G = PbFree Package 4 = Drain J (V = 50 V, I = 1.5 A, V = 10 V, DD D(pk) GS R = 25 ) G Thermal Resistance, JunctiontoCase R 5.2 C/W JC ORDERING INFORMATION JunctiontoAmbient (Note 1) R 72 JA JunctiontoAmbient (Note 2) 100 R JA Device Package Shipping Maximum Lead Temperature for Soldering T 260 C L NID9N05ACLT4G DPAK 2500/Tape & Reel Purposes, 1/8 from Case for 10 seconds (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NID9N05BCLT4G DPAK 2500/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 2 1. When surface mounted to a FR4 board using 1 pad size, (Cu area 1.127 in ). For information on tape and reel specifications, 2. When surface mounted to a FR4 board using minimum recommended pad including part orientation and tape sizes, please 2 size, (Cu area 0.412 in ). refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 11 NID9N05CL/DNID9N05ACL, NID9N05BCL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V (BR)DSS (V = 0 V, I = 1.0 mA, T = 25C) 52 55 59 V GS D J (V = 0 V, I = 1.0 mA, T = 40C to 125C) 50.8 54 59.5 V GS D J Temperature Coefficient (Negative) 10 mV/C Zero Gate Voltage Drain Current I A DSS (V = 40 V, V = 0 V) 10 DS GS (V = 40 V, V = 0 V, T = 125C) 25 DS GS J GateBody Leakage Current I A GSS (V = 8 V, V = 0 V) 10 GS DS (V = 14 V, V = 0 V) 22 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V GS(th) (V = V , I = 100 A) 1.3 1.75 2.5 V DS GS D 4.5 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 4.0 V, I = 1.5 A) 153 181 GS D (V = 3.5 V, I = 0.6 A) 175 364 GS D (V = 3.0 V, I = 0.2 A) 1210 GS D (V = 12 V, I = 9.0 A) 70 90 GS D (V = 12 V, I = 12 A) 67 95 GS D Forward Transconductance (Note 3) (V = 15 V, I = 9.0 A) g 24 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 155 250 pF iss Output Capacitance C 60 100 (V = 40 V, V = 0 V, f = 10 kHz) oss DS GS Transfer Capacitance C 25 40 rss Input Capacitance C 175 pF iss Output Capacitance C 70 (V = 25 V, V = 0 V, f = 10 kHz) DS GS oss Transfer Capacitance C 30 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 130 200 ns d(on) Rise Time t 500 750 r (V = 10 V, V = 40 V, GS DD I = 9.0 A, R = 9.0 ) D G TurnOff Delay Time t 1300 2000 d(off) Fall Time t 1150 1850 f TurnOn Delay Time t 200 ns d(on) Rise Time t 500 r (V = 10 V, V = 15 V, GS DD I = 1.5 A, R = 2 k ) D G TurnOff Delay Time t 2500 d(off) Fall Time t 1800 f TurnOn Delay Time t 120 ns d(on) Rise Time t 275 r (V = 10 V, V = 15 V, GS DD I = 1.5 A, R = 50 ) D G TurnOff Delay Time t 1600 d(off) Fall Time t 1100 f Gate Charge Q 4.5 7.0 nC T (V = 4.5 V, V = 40 V, GS DS Q 1.2 1 I = 9.0 A) (Note 3) D Q 2.7 2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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