IPD50R650CEAUMA1 Infineon

IPD50R650CE MOSFET DPAK 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and 2 1 offering the best cost down performance ratio available on the market. 3 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for standard grade applications Gate Pin 1 Applications Source Pin 3 PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 0.65 DS(on),max I 9 A D Q 15 nC g,typ I 19 A D,pulse Eoss 400V 1.69 J Type / Ordering Code Package Marking Related Links IPD50R650CE PG-TO 252 50S650CE see Appendix A Final Data Sheet 1 Rev. 2.3, 2016-06-13500V CoolMOS CE Power Transistor IPD50R650CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.3, 2016-06-13