BSZ215C H OptiMOS2 + OptiMOS-P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel V -20 20 V Enhancement mode DS R V =4.5 V 150 55 Super Logic level (2.5V rated) mW DS(on),max GS Common drain V =2.5 V 310 95 GS I -3.2 5.1 A Avalanche rated D 175 C operating temperature Qualified according to AEC Q101 100% lead-free RoHS compliant Halogen-free according to IEC61246-21 Type Package Marking Lead Free Halogen Free Packing BSZ215C H PG-TSDSON-8 LTI 215C Yes Yes Non dry 1) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P N I T =25C Continuous drain current -3.2 5.1 A D A T =100C -2.2 3.6 A Pulsed drain current I T =25C -13 20 D,pulse A P: I =-3.2A, D E N: I =5.1A, Avalanche energy, single pulse 11 11 mJ AS D R =25W GS V 12 Gate source voltage V GS 2) T =25C 2.5 Power dissipation P W A tot T , T -55 ... 175 Operating and storage temperature C j stg ESD class JESD22-A114-HBM 0 (<250V) T 260 Soldering temperature C solder IEC climatic category DIN IEC 68-1 55/175/56 1) Remark: only one of both transistors active Rev 2.03 page 1 2016-10-04BSZ215C H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics P Thermal resistance, junction - R - - 8 K/W thJC case N 2 2) Device on PCB R - - 60 K/W thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage P - - -20 V (BR)DSS GS D N V =0V, I =250A 20 - - GS D V V =V , I =-110A Gate threshold voltage P -1.4 -1.0 -0.7 GS(th) DS GS D N V =V , I =110A 0.8 1.1 1.4 DS GS D V =-20V, V =0V, DS GS Zero gate voltage drain current P I - - -0.1 A DSS T =25C j V =20V, V =0V, DS GS N - - 0.1 T =25C j V =-20V, V =0V, DS GS P - - -50 T =175C j V =20V, V =0V, DS GS N - - 50 T =175C j Gate-source leakage current P I V =12V, V =0V - - 100 nA GSS GS DS N V =-2.5V, GS R P - 144 310 mW DS(on) Drain-source on-state I =2.1A D resistance N V =2.5V, I =1.9A - 63 95 GS D P V =-4.5V, I =-3.2A - 95 150 GS D V =4.5V, I =5.1A N - 41 55 GS D V >2 I R , DS D DS(on)max g Transconductance P 4 7.9 - S fs I =-2.2A D V >2 I R , DS D DS(on)max N 5.5 11 - I =3.6A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.03 page 2 2016-10-04