DMT10H014LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test in Production D BV R Max DSS DS(ON) T = +25C A High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) 8.9A 15m VGS = 10V 100V Low Input Capacitance 18m V = 6.0V 7.9A GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SO-8 This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R , yet maintain superior switching DS(ON) Case Material: Molded Plastic,Gree Molding Compound. performance. This device is ideal for use in notebook battery power UL Flammability Classification Rating 94V-0 management and load switch. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (Approximate) D S D SO-8 S D S D G G D S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMT10H014LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT10H014LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 8.9 A Continuous Drain Current (Note 6) V = 10V I A GS D State 7.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 54 A I DM Avalanche Current, L = 3mH 7.5 A I AS Avalanche Energy, L = 3mH E 85 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W P D Thermal Resistance, Junction to Ambient (Note 5) 100 C/W R JA Total Power Dissipation (Note 6) 1.67 W P D Thermal Resistance, Junction to Ambient (Note 6) R 75 C/W JA Thermal Resistance, Junction to Case (Note 6) R 12 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.4 2 3 V V V = V , I = 250A GS(TH) DS GS D 11.5 15 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R 15 18 m V = 6V, I = 20A DS(ON) GS D 17.5 25 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.9 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1871 iss V = 50V, V = 0V DS GS 261 Output Capacitance C pF oss f = 1MHz 7 Reverse Transfer Capacitance Crss Gate Resistance 0.75 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 33.3 Q g V = 50V, I = 10A, DD D Gate-Source Charge 6.9 nC Q gs V = 10V GS Gate-Drain Charge 5.1 Q gd 6.5 Turn-On Delay Time t D(ON) 7 Turn-On Rise Time t V = 50V, V = 10V, R DD GS ns 19.7 Turn-Off Delay Time t I = 10A, R = 6 D(OFF) D G 8.1 Turn-Off Fall Time t F 37.9 Reverse Recovery Time t ns RR I = 10A, di/dt = 100A/s F 51.9 Reverse Recovery Charge nC QRR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H014LSS July 2016 Diodes Incorporated www.diodes.com Document number: DS38798 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION