Si4470EY Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.011 at V = 10 V 12.7 GS TrenchFET Power MOSFETs 60 0.013 at V = 6.0 V 11.7 GS 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4470EY-T1-E3 (Lead (Pb)-free) Si4470EY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS T = 25 C 12.7 9.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 10.6 7.5 A Pulsed Drain Current I 50 A DM I Avalanche Current L = 0.1 mH 50 AS a I 3.1 1.5 Continuous Source Current (Diode Conduction) S T = 25 C 3.75 1.85 A a P W Maximum Power Dissipation D T = 70 C 2.6 1.3 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 40 a R Maximum Junction-to-Ambient thJA Steady State 65 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71606 www.vishay.com S10-2137-Rev. D, 20-Sep-10 1Si4470EY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 48 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 48 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 12 A 0.009 0.011 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 10 A 0.0105 0.013 GS D a g V = 15 V, I = 10 A 50 S Forward Transconductance fs DS D a V I = 3.0 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 46 70 g Q V = 30 V, V = 10 V, I = 12 A Gate-Source Charge 11.5 nC gs DS GS D Gate-Drain Charge Q 11.5 gd R Gate Resistance 0.25 0.85 1.4 g Turn-On Delay Time t 16 25 d(on) t Rise Time V = 30 V, R = 30 12 18 r DD L I 1.0 A, V = 10 V, R = 6 Turn-Off Delay Time t 50 75 ns D GEN g d(off) t Fall Time 30 45 f Source-Drain Reverse Recovery Time t I = 3.0 A, dI/dt = 100 A/s 40 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 50 50 V = 10 V thru 5 V GS 40 40 30 30 20 20 T = 125 C C 10 10 2 V, 3 V 25 C 4 V - 55 C 0 0 0 2468 10 0 123 456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71606 2 S10-2137-Rev. D, 20-Sep-10 I - Drain Current (A) D I - Drain Current (A) D