Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.045 at V = 10 V 7.7 GS Extremely Low Q for Switching Losses 150 23 nC gd 0.047 at V = 8 V 7.5 GS 100 % R Tested g 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free) Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 7.7 C T = 70 C 6.1 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.5 A b, c T = 70 C 4.5 A A Pulsed Drain Current I 50 DM T = 25 C 4.5 C Continuous Source-Drain Diode Current b, c I T = 25 C S 2.6 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 5.9 C T = 70 C 3.8 C Maximum Power Dissipation P W D b, c T = 25 C 3.1 A b, c T = 70 C 2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 33 40 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 74283 www.vishay.com S11-0209-Rev. C, 14-Feb-11 1Si4472DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 V DS GS D V Temperature Coefficient V /T 172 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 10 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 150 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 10 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 5 A 0.036 0.045 GS D a Drain-Source On-State Resistance R DS(on) V = 8 V, I = 5 A 0.0375 0.047 GS D a Forward Transconductance g V = 15 V, I = 5 A 23 S fs DS D b Dynamic Input Capacitance C 1735 iss Output Capacitance C 16V = 50 V, V = 0 V, f = 1 MHz0 pF oss DS GS Reverse Transfer Capacitance C 37 rss V = 75 V, V = 10 V, I = 5 A 28.5 43 DS GS D Total Gate Charge Q g 23 35 nC Gate-Source Charge Q 8V = 75 V, V = 8 V, I = 5 A gs DS GS D Gate-Drain Charge Q 6.5 gd Gate Resistance R f = 1 MHz 0.85 1.3 g Turn-on Delay Time t 14 21 d(on) Rise Time t 1218 V = 50 V, R = 10 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 2233 D GEN g d(off) Fall Time t 610 f ns Turn-On Delay Time t 16 24 d(on) Rise Time t 12 18 V = 50 V, R = 10 r DD L I 5 A, V = 8 V, R = 1 Turn-Off Delay Time t 2030 D GEN g d(off) Fall Time t 712 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 7.7 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 2.6 A 0.77 1.2 V SD S Body Diode Reverse Recovery Time t 63 95 ns rr Body Diode Reverse Recovery Charge Q 110 165 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 49 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74283 2 S11-0209-Rev. C, 14-Feb-11