X-On Electronics has gained recognition as a prominent supplier of SI4472DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4472DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4472DY-T1-GE3 Vishay

SI4472DY-T1-GE3 electronic component of Vishay
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Part No.SI4472DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 150V 7.7A 5.9W 45mohm 10V
Datasheet: SI4472DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 2.8001
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.5287
10 : USD 2.9218
100 : USD 2.4049
250 : USD 2.3263
500 : USD 2.1127
1000 : USD 2.1015
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 1.9197
N/A

Obsolete
   
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Id - Continuous Drain Current
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We are delighted to provide the SI4472DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4472DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4472DY Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.045 at V = 10 V 7.7 GS Extremely Low Q for Switching Losses 150 23 nC gd 0.047 at V = 8 V 7.5 GS 100 % R Tested g 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View S Ordering Information: Si4472DY-T1-E3 (Lead (Pb)-free) Si4472DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 7.7 C T = 70 C 6.1 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.5 A b, c T = 70 C 4.5 A A Pulsed Drain Current I 50 DM T = 25 C 4.5 C Continuous Source-Drain Diode Current b, c I T = 25 C S 2.6 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 5.9 C T = 70 C 3.8 C Maximum Power Dissipation P W D b, c T = 25 C 3.1 A b, c T = 70 C 2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 33 40 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 74283 www.vishay.com S11-0209-Rev. C, 14-Feb-11 1Si4472DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 V DS GS D V Temperature Coefficient V /T 172 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 10 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 150 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 10 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 5 A 0.036 0.045 GS D a Drain-Source On-State Resistance R DS(on) V = 8 V, I = 5 A 0.0375 0.047 GS D a Forward Transconductance g V = 15 V, I = 5 A 23 S fs DS D b Dynamic Input Capacitance C 1735 iss Output Capacitance C 16V = 50 V, V = 0 V, f = 1 MHz0 pF oss DS GS Reverse Transfer Capacitance C 37 rss V = 75 V, V = 10 V, I = 5 A 28.5 43 DS GS D Total Gate Charge Q g 23 35 nC Gate-Source Charge Q 8V = 75 V, V = 8 V, I = 5 A gs DS GS D Gate-Drain Charge Q 6.5 gd Gate Resistance R f = 1 MHz 0.85 1.3 g Turn-on Delay Time t 14 21 d(on) Rise Time t 1218 V = 50 V, R = 10 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 2233 D GEN g d(off) Fall Time t 610 f ns Turn-On Delay Time t 16 24 d(on) Rise Time t 12 18 V = 50 V, R = 10 r DD L I 5 A, V = 8 V, R = 1 Turn-Off Delay Time t 2030 D GEN g d(off) Fall Time t 712 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 7.7 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 2.6 A 0.77 1.2 V SD S Body Diode Reverse Recovery Time t 63 95 ns rr Body Diode Reverse Recovery Charge Q 110 165 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 49 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74283 2 S11-0209-Rev. C, 14-Feb-11

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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