Si4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.058 at V = 10 V 5.3 GS TrenchFET Power MOSFET N-Channel 60 6 nC 0.072 at V = 4.5 V 4.7 GS 100 % R and UIS Tested g 0.120 at V = - 10 V - 3.9 GS APPLICATIONS P-Channel - 60 8 nC 0.150 at V = - 4.5 V - 3.5 GS CCFL Inverter D S 1 2 SO-8 S D 1 1 8 1 G D G 1 2 7 1 2 G 1 S D 2 3 6 2 G D 4 5 2 2 Top View S D 1 2 Ordering Information: Si4559ADY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET Si4559ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 60 - 60 DS V Gate-Source Voltage V 20 GS T = 25 C 5.3 - 3.9 C T = 70 C 4.3 - 3.2 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 4.3 - 3.0 b, c b, c T = 70 C A 3.4 - 2.4 Pulsed Drain Current (10 s Pulse Width) I 20 - 25 A DM T = 25 C 2.6 - 2.8 C Source Drain Current Diode Current I S b, c b, c T = 25 C A 1.7 - 1.7 Pulsed Source-Drain Current I 20 - 25 SM Single Pulse Avalanche Current I 11 15 AS L = 0.1 mH Single Pulse Avalanche Energy E 6.1 11 mJ AS T = 25 C 3.1 3.4 C T = 70 C 22.2 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2 2 b, c b, c T = 70 C A 1.3 1.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R Maximum Junction-to-Ambient t 10 s 55 62.5 53 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 33 40 30 37 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W for N-Channel and P-Channel. Document Number: 73624 www.vishay.com S09-0393-Rev. B, 09-Mar-09 1Si4559ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Typ. Parameter Symbol Test Conditions Min. Max. Unit Static V = 0 V, I = 250 A N-Ch 60 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 60 GS D I = 250 A N-Ch 55 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 50 D mV I = 250 A N-Ch - 6 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 4 D V = V , I = 250 A N-Ch 1 3 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1 - 3 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - 100 V = 60 V, V = 0 V N-Ch 1 DS GS V = - 60 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 60 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 10 V P-Ch - 25 DS GS V = 10 V, I = 4.3 A N-Ch 0.046 0.058 GS D V = - 10 V, I = - 3.1 A P-Ch 0.1 0.120 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 3.9 A N-Ch 0.059 0.072 GS D V = - 4.5 V, I = - 0.2 A P-Ch 0.126 0.150 GS D V = 15 V, I = 4.3 A N-Ch 15 DS D b g S Forward Transconductance fs V = - 15 V, I = - 3.1 A P-Ch 8.5 DS D a Dynamic N-Ch 665 C Input Capacitance iss N-Channel P-Ch 650 V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch 75 C Output Capacitance pF oss P-Ch 95 P-Channel N-Ch 40 V = - 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 60 V = 30 V, V = 10 V, I = 4.3 A N-Ch 13 20 DS GS D V = - 30 V, V = - 10 V, I = - 3.1 A P-Ch 14.5 22 DS GS D Q Total Gate Charge g N-Ch 6 9 N-Channel P-Ch 8 12 nC V = 30 V, V = 4.5 V, I = 4.3 A DS GS D N-Ch 2.3 Q Gate-Source Charge gs P-Ch 2.2 P-Channel N-Ch 2.6 V = - 30 V, V = - 4.5 V, I = - 3.1 A DS GS D Q Gate-Drain Charge gd P-Ch 3.7 N-Ch 2 3 R Gate Resistance f = 1 MHz g P-Ch 14 20 www.vishay.com Document Number: 73624 2 S09-0393-Rev. B, 09-Mar-09