Si4465ADY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R () DS DS(on) I (A) Q (Typ.) D g Available 0.009 at V = - 4.5 V - 13.7 TrenchFET Power MOSFET GS 1.8 V Rated 55 nC 0.011 at V = - 2.5 V - 12.4 - 8 GS 100 % R Tested g 0.016 at V = - 1.8 V - 10 GS S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free) Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V - 8 Drain-Source Voltage DS V Gate-Source Voltage V 8 GS T = 25 C - 13.7 A T = 70 C - 11 A a, b I Continuous Drain Current (T = 150 C) D J T = 25 C - 20 C T = 70 C - 16 A C I - 40 Pulsed Drain Current DM I - 2.5 S a, b Continuous Source Current (Diode Conduction) I 40 SM T = 25 C 3.0 A T = 70 C 1.95 A a, b P W Maximum Power Dissipation D T = 25 C 6.5 C T = 70 C 4.2 C Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 41 a R C/W Maximum Junction-to-Ambient (MOSFET) thJA Steady State 67 80 Maximum Junction-to-Foot (Drain) Steady State R 15 19 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t 10 s. Document Number: 73856 www.vishay.com S09-0393-Rev. B, 09-Mar-09 1Si4465ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 5 DS GS J a I V 5 V, V = - 4.5 V On-State Drain Current - 20 A D(on) DS GS V = - 4.5 V, I = - 14 A 0.0075 0.009 GS D a R V = - 2.5 V, I = - 12 A 0.0092 0.011 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 10 A 0.013 0.016 GS D a g V = - 10 V, I = - 14 A 58 S Forward Transconductance fs DS D a V I = - 2.1 A, V = 0 V - 0.57 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 55 85 g Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 14 A 6 nC gs DS GS D Q Gate-Drain Charge 10 gd Gate Resistance R 2.5 3.8 g t Turn-On Delay Time 33 50 d(on) Rise Time t V = - 4 V, R = 4 170 255 r DD L t I - 10 A, V = - 4.5 V, R = 6 Turn-Off Delay Time 168 255 ns d(off) D GEN g t Fall Time 112 170 f t Source-Drain Reverse Recovery Time 85 130 rr I = - 2.1 A, dI/dt = 100 A/s F Q Body Diode Reverse Recovery Charge 81 125 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73856 2 S09-0393-Rev. B, 09-Mar-09