X-On Electronics has gained recognition as a prominent supplier of SI4465ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4465ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4465ADY-T1-GE3 Vishay

SI4465ADY-T1-GE3 electronic component of Vishay
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Part No.SI4465ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 8.0V 13.7A 3.0W 9.0mohm 4.5V
Datasheet: SI4465ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2535 ea
Line Total: USD 1.25 
Availability - 9201
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24250
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.0217
5000 : USD 1.0114
10000 : USD 1.0094

2059
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1574
10 : USD 1.1396
25 : USD 1.1216
100 : USD 1.1038
250 : USD 1.086
500 : USD 1.0681
1000 : USD 1.0503

5
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8044
10 : USD 2.0825
30 : USD 1.7731

9201
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2535
10 : USD 1.0833
100 : USD 0.9913
2500 : USD 0.9051

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SI4465ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4465ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4465ADY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R () DS DS(on) I (A) Q (Typ.) D g Available 0.009 at V = - 4.5 V - 13.7 TrenchFET Power MOSFET GS 1.8 V Rated 55 nC 0.011 at V = - 2.5 V - 12.4 - 8 GS 100 % R Tested g 0.016 at V = - 1.8 V - 10 GS S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D Ordering Information: Si4465ADY-T1-E3 (Lead (Pb)-free) Si4465ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V - 8 Drain-Source Voltage DS V Gate-Source Voltage V 8 GS T = 25 C - 13.7 A T = 70 C - 11 A a, b I Continuous Drain Current (T = 150 C) D J T = 25 C - 20 C T = 70 C - 16 A C I - 40 Pulsed Drain Current DM I - 2.5 S a, b Continuous Source Current (Diode Conduction) I 40 SM T = 25 C 3.0 A T = 70 C 1.95 A a, b P W Maximum Power Dissipation D T = 25 C 6.5 C T = 70 C 4.2 C Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 34 41 a R C/W Maximum Junction-to-Ambient (MOSFET) thJA Steady State 67 80 Maximum Junction-to-Foot (Drain) Steady State R 15 19 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t 10 s. Document Number: 73856 www.vishay.com S09-0393-Rev. B, 09-Mar-09 1Si4465ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 8 V, V = 0 V, T = 55 C - 5 DS GS J a I V 5 V, V = - 4.5 V On-State Drain Current - 20 A D(on) DS GS V = - 4.5 V, I = - 14 A 0.0075 0.009 GS D a R V = - 2.5 V, I = - 12 A 0.0092 0.011 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 10 A 0.013 0.016 GS D a g V = - 10 V, I = - 14 A 58 S Forward Transconductance fs DS D a V I = - 2.1 A, V = 0 V - 0.57 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 55 85 g Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 14 A 6 nC gs DS GS D Q Gate-Drain Charge 10 gd Gate Resistance R 2.5 3.8 g t Turn-On Delay Time 33 50 d(on) Rise Time t V = - 4 V, R = 4 170 255 r DD L t I - 10 A, V = - 4.5 V, R = 6 Turn-Off Delay Time 168 255 ns d(off) D GEN g t Fall Time 112 170 f t Source-Drain Reverse Recovery Time 85 130 rr I = - 2.1 A, dI/dt = 100 A/s F Q Body Diode Reverse Recovery Charge 81 125 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73856 2 S09-0393-Rev. B, 09-Mar-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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