X-On Electronics has gained recognition as a prominent supplier of Si4435DDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si4435DDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si4435DDY-T1-E3 Vishay

Si4435DDY-T1-E3 electronic component of Vishay
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Part No.Si4435DDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs SO-8
Datasheet: Si4435DDY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5543 ea
Line Total: USD 0.55 
Availability - 3153
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1958
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3964
10 : USD 0.3857
25 : USD 0.3849
100 : USD 0.3406
250 : USD 0.3372
500 : USD 0.3333
1000 : USD 0.3294

16975
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3272
5000 : USD 0.2996

2425
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.299
5000 : USD 0.299
7500 : USD 0.299
10000 : USD 0.299
12500 : USD 0.299

1502
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6121
10 : USD 0.5389
30 : USD 0.5014
100 : USD 0.4659
500 : USD 0.4429
1000 : USD 0.4324

3153
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5543
10 : USD 0.4761
100 : USD 0.4071
2500 : USD 0.3565
5000 : USD 0.284
10000 : USD 0.2806

1161
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3
Multiples : 1
3 : USD 0.5782
10 : USD 0.553
39 : USD 0.4578
105 : USD 0.4326
1000 : USD 0.4158

2425
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3724
5000 : USD 0.3345
25000 : USD 0.3332

16975
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3272
5000 : USD 0.2996

1958
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 24
Multiples : 1
24 : USD 0.3294

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the Si4435DDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si4435DDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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New Product Si4435DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) Definition DS DS(on) g D TrenchFET Power MOSFET 0.024 at V = - 10 V - 11.4 GS - 30 15 nC Compliant to RoHS Directive 2002/95/EC 0.035 at V = - 4.5 V - 9.4 GS APPLICATIONS Load Switches Battery Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 11.4 C T = 70 C - 9.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 8.1 A a, b T = 70 C - 6.5 A A I - 50 Pulsed Drain Current DM - 4.1 T = 25 C C Continuous Source-Drain Diode Current I S a, b T = 25 C - 2.0 A Avalanche Current I - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 5.0 C T = 70 C 3.2 C P Maximum Power Dissipation W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 38 50 thJA C/W R Maximum Junction-to-Foot Steady State 20 25 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 68841 www.vishay.com S09-0863-Rev. C, 18-May-09 1New Product Si4435DDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 3.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 9.1 A 0.0195 0.024 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 6.9 A 0.028 0.035 GS D a g V = - 10 V, I = - 9.1 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1350 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 215 pF oss DS GS C Reverse Transfer Capacitance 185 rss V = - 15 V, V = - 10 V, I = - 9.1 A 32 50 DS GS D Q Total Gate Charge g 15 25 nC Q V = - 15 V, V = - 4.5 V, I = - 9.1 A Gate-Source Charge 4 gs DS GS D Q Gate-Drain Charge 7.5 gd R Gate Resistance f = 1 MHz 5.8 g t Turn-On Delay Time 10 15 d(on) t V = - 15 V, R = 15 Rise Time 815 r DD L t I - 1 A, V = - 10 V, R = 1 Turn-Off DelayTime 45 70 d(off) D GEN g t Fall Time 12 25 f ns t Turn-On Delay Time 42 70 d(on) t V = - 15 V, R = 15 Rise Time 35 60 r DD L t I - 1 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 40 70 d(off) D GEN g t Fall Time 16 30 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 4.1 S C A Pulse Diode Forward Current I - 50 SM Body Diode Voltage V I = - 2 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 34 60 ns rr Body Diode Reverse Recovery Charge Q 22 40 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68841 2 S09-0863-Rev. C, 18-May-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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