New Product SiR404DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.00160 at V = 10 V 60 GS TrenchFET Gen III Power MOSFET 0.00175 at V = 4.5 V 20 60 64.5 nC GS 100 % R Tested g 0.00225 at V = 2.5 V 60 100 % UIS Tested GS 2.5 V and 3.3 V Gate Drive MOSFET for dc-to-dc PowerPAK SO-8 Applications Compliant to RoHS Directive 2002/95/EC S 6.15 mm 5.15 mm APPLICATIONS 1 S D 2 Fixed Telecom S 3 G OR-ing 4 POL D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: SiR404DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 12 GS a T = 25 C C 60 a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 45.6 b, c T = 70 C A 36.6 A I Pulsed Drain Current 100 DM a T = 25 C C 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A 5.6 I Single Pulse Avalanche Current 50 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 125 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 C/W. Document Number: 64815 www.vishay.com S09-0873-Rev. A, 18-May-09 1New Product SiR404DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 17 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0013 0.00160 GS D a R V = 4.5 V, I = 20 A 0.0014 0.00175 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 15 A 0.0018 0.00225 GS D a g V = 10 V, I = 20 A 150 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 8130 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 1570 pF oss DS GS C Reverse Transfer Capacitance 735 rss V = 10 V, V = 2.5 V, I = 20 A 36.5 DS GS D Total Gate Charge Q V = 10 V, V = 3.3 V, I = 20 A 47.5 g DS GS D 64.5 97 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 20 A 11.4 gs DS GS D Q Gate-Drain Charge 12.1 gd Gate Resistance R f = 1 MHz 0.2 1.0 2 g t Turn-On Delay Time 14 28 d(on) Rise Time t 918 V = 10 V, R = 1.0 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 68 120 d(off) Fall Time t 918 f ns t Turn-On Delay Time 35 60 d(on) Rise Time t 20 40 V = 10 V, R = 1.0 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 123 210 d(off) Fall Time t 26 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.65 1.1 V SD S t Body Diode Reverse Recovery Time 38 75 ns rr Body Diode Reverse Recovery Charge Q 36 72 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64815 2 S09-0873-Rev. A, 18-May-09