SiR412DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g Definition V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.012 at V = 10 V 20 GS Low Thermal Resistance PowerPAK 25 4.9 nC 0.015 at V = 4.5 V 20 GS Package with Low 1.07 mm Profile Optimized for High-Side Synchronous PowerPAK SO-8 Rectifier Operation 100 % R Tested g 100 % UIS Tested S Compliant to RoHS Directive 2002/95/EC 6.15 mm 5.15 mm 1 S 2 APPLICATIONS S D 3 G Server, Desktop 4 - High-Side Switch D 8 D 7 D 6 G D 5 Bottom View Ordering Information: SiR412DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 25 DS V Gate-Source Voltage V 20 GS g T = 25 C 20 C g T = 70 C 20 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 13.4 A b, c T = 70 C 10.7 A A Pulsed Drain Current I 50 DM g T = 25 C 20 C Continuous Source-Drain Diode Current I S b, c T = 25 C 3.2 A Single Pulse Avalanche Current I 15 AS L = 0.1 mH Avalanche Energy E 11.25 mJ AS T = 25 C 15.6 C T = 70 C 10 C Maximum Power Dissipation P W D b, c T = 25 C 3.9 A b, c T = 70 C 2.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R Maximum Junction-to-Ambient t 10 s 27 32 thJA C/W R Maximum Junction-to-Case (Drain) Steady State 6.4 8.0 thJC Notes: a. Base on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. g. Package limited. Document Number: 65364 www.vishay.com S09-2029-Rev. A, 05-Oct-09 1SiR412DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 26 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.010 0.0120 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8 A 0.0125 0.0150 GS D a g V = 15 V, I = 10 A 33 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 600 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 180 pF oss DS GS C Reverse Transfer Capacitance 71 rss V = 10 V, V = 10 V, I = 10 A 10.7 16 DS GS D Q Total Gate Charge g 4.9 7.5 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 10 A 1.4 gs DS GS D Q Gate-Drain Charge 1.4 gd R Gate Resistance f = 1 MHz 0.6 2.7 5.4 g t Turn-On Delay Time 13 26 d(on) t Rise Time V = 10 V, R = 1 13 26 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 13 26 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 714 d(on) Rise Time t 10 20 V = 10 V, R = 1 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 13 26 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 20 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 13 60 ns rr Body Diode Reverse Recovery Charge Q 544 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7 a ns Reverse Recovery Rise Time t 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65364 2 S09-2029-Rev. A, 05-Oct-09