SiR422DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0066 at V = 10 V TrenchFET Power MOSFET 40 GS 40 16.1 nC 100 % R Tested g 0.008 at V = 4.5 V 40 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S POL 6.15 mm 5.15 mm D 1 S Synchronous Rectification 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR422DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 40 C a T = 70 C 40 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 20.5 A A b, c T = 70 C 16.4 A Pulsed Drain Current I 70 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS a T = 25 C 40 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 4.1 A T = 25 C 34.7 C T = 70 C 22.2 C Maximum Power Dissipation P W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.1 3.6 thJC Notes: a. Based on T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. Document Number: 65025 www.vishay.com S09-1336-Rev. A, 13-Jul-09 1SiR422DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 46 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.8 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0054 0.0066 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0065 0.008 GS D a g V = 15 V, I = 20 A Forward Transconductance 70 S fs DS D b Dynamic Input Capacitance C 1785 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 264 pF oss DS GS Reverse Transfer Capacitance C 120 rss V = 20 V, V = 10 V, I = 20 A 32 48 DS GS D Q Total Gate Charge g 16.1 25 nC Gate-Source Charge Q 4.5 V = 20 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 5.6 gd Gate Resistance R f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 19 35 d(on) t Rise Time V = 20 V, R = 2 84 145 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 28 55 d(off) t Fall Time 11 22 f ns t Turn-On Delay Time 918 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 40 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.76 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 40 ns rr Body Diode Reverse Recovery Charge Q 14 25 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65025 2 S09-1336-Rev. A, 13-Jul-09