New Product SiR466DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS g 0.0035 at V = 10 V GS 40 100 % R Tested COMPLIANT 30 21.5 nC g g 0.0051 at V = 4.5 V GS 40 100 % UIS Tested APPLICATIONS PowerPAK SO-8 DC/DC Converter - Low Side Switch S D 6.15 mm 5.15 mm Notebook PC 1 S 2 S Graphic Cards 3 G Server 4 D 8 G D 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR466DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS g T = 25 C C 40 g T = 70 C C 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 28 b, c T = 70 C A 22.5 A I Pulsed Drain Current 70 DM g T = 25 C C 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 30 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 45 AS T = 25 C 54 C T = 70 C 34.7 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C A 3.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.8 2.3 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product SiR466DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0029 0.0035 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0042 0.0051 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2730 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 540 pF oss DS GS C Reverse Transfer Capacitance 205 rss V = 15 V, V = 10 V, I = 10 A 42.5 65 DS GS D Q Total Gate Charge g 21.5 33 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 6.9 gs DS GS D Q Gate-Drain Charge 7.1 gd R Gate Resistance f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 29 50 d(off) Fall Time t 918 f ns t Turn-On Delay Time 30 50 d(on) Rise Time t 19 35 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) Fall Time t 15 30 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 28 55 ns rr Body Diode Reverse Recovery Charge Q 21 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68879 2 S-82018-Rev. A, 01-Sep-08