X-On Electronics has gained recognition as a prominent supplier of SIR466DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR466DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR466DP-T1-GE3 Vishay

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Part No.SIR466DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 30 V 40A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
Datasheet: SIR466DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.712 ea
Line Total: USD 0.71 
Availability - 1833
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2393
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7034
10 : USD 0.6422
25 : USD 0.64
100 : USD 0.5715
250 : USD 0.5658
500 : USD 0.52
1000 : USD 0.4939

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4485
6000 : USD 0.4485
9000 : USD 0.4485
12000 : USD 0.4485

1833
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.712
10 : USD 0.5808
30 : USD 0.5152
100 : USD 0.4495
500 : USD 0.409
1000 : USD 0.3897

5390
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0592
10 : USD 0.8061
100 : USD 0.6313
500 : USD 0.537
1000 : USD 0.5348
3000 : USD 0.4887
24000 : USD 0.4865

2393
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 16
Multiples : 1
16 : USD 0.6422
25 : USD 0.64
100 : USD 0.5715
250 : USD 0.5658
500 : USD 0.52
1000 : USD 0.4939

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SIR466DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR466DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiR466DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS g 0.0035 at V = 10 V GS 40 100 % R Tested COMPLIANT 30 21.5 nC g g 0.0051 at V = 4.5 V GS 40 100 % UIS Tested APPLICATIONS PowerPAK SO-8 DC/DC Converter - Low Side Switch S D 6.15 mm 5.15 mm Notebook PC 1 S 2 S Graphic Cards 3 G Server 4 D 8 G D 7 D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR466DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS g T = 25 C C 40 g T = 70 C C 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 28 b, c T = 70 C A 22.5 A I Pulsed Drain Current 70 DM g T = 25 C C 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 30 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 45 AS T = 25 C 54 C T = 70 C 34.7 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C A 3.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 1.8 2.3 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product SiR466DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0029 0.0035 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0042 0.0051 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2730 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 540 pF oss DS GS C Reverse Transfer Capacitance 205 rss V = 15 V, V = 10 V, I = 10 A 42.5 65 DS GS D Q Total Gate Charge g 21.5 33 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 6.9 gs DS GS D Q Gate-Drain Charge 7.1 gd R Gate Resistance f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 29 50 d(off) Fall Time t 918 f ns t Turn-On Delay Time 30 50 d(on) Rise Time t 19 35 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) Fall Time t 15 30 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.74 1.1 V SD S t Body Diode Reverse Recovery Time 28 55 ns rr Body Diode Reverse Recovery Charge Q 21 42 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68879 2 S-82018-Rev. A, 01-Sep-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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