SiR664DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g a 0.0060 at V = 10 V GS 60 Material categorization: a For definitions of compliance please see 60 0.0075 at V = 6 V 12 nC GS 60 www.vishay.com/doc 99912 0.0095 at V = 4.5 V 54 GS APPLICATIONS PowerPAK SO-8 Primary Side Switching D Synchronous Rectification S 6.15 mm 5.15 mm 1 DC/DC Converters S 2 S Boost Converters 3 G 4 DC/AC Inverters G D 8 D 7 D 6 D S 5 Bottom View N-Channel MOSFET Ordering Information: SiR664DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS a T = 25 C 60 C T = 70 C C 54 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 21.5 b, c T = 70 C A 17.2 A I Pulsed Drain Current (t = 100 s) 150 DM a T = 25 C 60 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 50 C T = 70 C 32 C P Maximum Power Dissipation W D b, c T = 25 C A 5 b, c T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Case (Drain) 22.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 62849 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiR664DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 103 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.3 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0050 0.0060 GS D a R V = 6 V, I = 15 A 0.0060 0.0075 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 10 A 0.0073 0.0095 GS D a g V = 10 V, I = 20 A 70 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1750 iss C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance 720 pF oss DS GS C Reverse Transfer Capacitance 60 rss V = 30 V, V = 10 V, I = 10 A 26 40 DS GS D Total Gate Charge Q V = 30 V, V = 6 V, I = 10 A 16 24 g DS GS D 12 18 nC Q Gate-Source Charge V = 30 V, V = 4.5 V, I = 10 A 5 gs DS GS D Q Gate-Drain Charge 3.2 gd Output Charge Q V = 30 V, V = 0 V 29 45 oss DS GS R Gate Resistance f = 1 MHz 0.5 1.7 3 g Turn-On Delay Time t 10 20 d(on) t Rise Time V = 30 V, R = 3 12 24 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 24 48 D GEN g d(off) t Fall Time 714 f ns Turn-On Delay Time t 34 68 d(on) t Rise Time V = 30 V, R = 3 95 190 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t D GEN g 20 40 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A Pulse Diode Forward Current (t = 100 s) I 150 p SM V I = 5 A Body Diode Voltage 0.76 1.1 V SD S t Body Diode Reverse Recovery Time 29 55 ns rr Q Body Diode Reverse Recovery Charge 19 35 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62849 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1160-Rev. A, 13-May-13 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000