X-On Electronics has gained recognition as a prominent supplier of SIR688DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR688DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR688DP-T1-GE3 Vishay

Name: SIR688DP-T1-GE3
Brand: Vishay
SKU: SIR688DPT1GE3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SIR688DP-T1-GE3 electronic component of Vishay

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Part No.	SIR688DP-T1-GE3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Datasheet:	SIR688DP-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 1.0093 ea
Line Total: USD 3027.9

Availability - 0

MOQ: 3000 Multiples: 3000
Pack Size: 3000

SIR688DP-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 08 Nov to Thu. 14 Nov MOQ : 3000 Multiples : 3000	3000 : USD 1.0093

0 Ship by Fri. 15 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 3.6401 10 : USD 3.2124 30 : USD 2.9444 100 : USD 2.6706 500 : USD 2.5468 1000 : USD 2.4924

0 Ship by Thu. 14 Nov to Mon. 18 Nov MOQ : 1 Multiples : 1	1 : USD 5.5828 10 : USD 2.0194 25 : USD 1.9019 100 : USD 1.6241 500 : USD 1.3356 1000 : USD 1.1112 3000 : USD 1.0685

We are delighted to provide the SIR688DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR688DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIR688DP-T1-GE3 is a silicon carbide CoolMOS™ P-channel power MOSFET with outstanding switching performance and ultra low RDS(on). This device is manufactured by Vishay and features a 60V drain-to-source voltage (Vds), a 20V gate-to-source voltage (Vgs), and an ultra-small, PowerPAK SO-8 (Low-Gate Charge) package. This device has a high peak current capability and its low intrinsic capacitances make it ideal for use in switching and general-purpose applications. It has a very low on-resistance of 145 mOhms @ 4.5V Vgs. The SIR688DP-T1-GE3 is a P-channel MOSFET and provides low-switch losses and high efficiency in switching power supplies.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TECHNO
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Vishay / BC Components
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VISHAY / LITE-ON
Vishay / MCB Industrie
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Vishay BC Components
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Vishay Huntington Electric Inc.
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON E E
Id - Continuous Drain Current 60 A 60 A
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Rds On - Drain-Source Resistance 2.9 mOhms 2.9 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.3 V 1.3 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 83 W 83 W
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERPAK - SO - 8 POWERPAK - SO - 8
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 66 nC 66 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet, Powerpak Trenchfet, Powerpak
Configuration Single Single
Height 1.04 mm 1.04 mm
Length 6.15 mm 6.15 mm
Series Sir Sir
Transistor Type 1 N - Channel 1 N - Channel
Width 5.15 mm 5.15 mm
Brand Vishay / Siliconix Vishay / Siliconix
Forward Transconductance - Min 70 S 70 S
Fall Time 8 ns 8 ns
Product Type Mosfet Mosfet
Rise Time 8 ns 8 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 31 ns 31 ns
Typical Turn-On Delay Time 15 ns 15 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000