X-On Electronics has gained recognition as a prominent supplier of SIR696DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR696DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR696DP-T1-GE3 Vishay

SIR696DP-T1-GE3 electronic component of Vishay
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Part No.SIR696DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 125V Vds 20V Vgs PowerPAK SO-8
Datasheet: SIR696DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.6107 ea
Line Total: USD 3664.2 
Availability - 0
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6000
Multiples : 3000
6000 : USD 0.6107

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 3.7664
10 : USD 1.4247
100 : USD 1.0588
500 : USD 0.8751
1000 : USD 0.6902
3000 : USD 0.6475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIR696DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR696DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiR696DP www.vishay.com Vishay Siliconix N-Channel 125 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes a, g V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g balance of R , Q , Q and Q DS(on) g sw oss 0.0115 at V = 10 V 60 GS 125 19.4 nC 100 % R and UIS tested g 0.0135 at V = 7.5 V 60 GS Material categorization: PowerPAK SO-8 Single for definitions of compliance please D see www.vishay.com/doc 99912 D 8 D 7 D 6 APPLICATIONS D 5 Fixed telecom DC/DC converter Primary and secondary side switch 1 2 S G Battery management 3 S 1 4 S G Top View Bottom View S Ordering Information: N-Channel MOSFET SiR696DP-T1-GE3 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 125 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C T = 70 C 53.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 16.4 A b, c T = 70 C 13.1 A A Pulsed Drain Current (t = 100 s) I 150 DM a T = 25 C 60 C Continuous Source-Drain Diode Current I S b, c T = 25 C 5.6 A Single Pulse Avalanche Current I 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, f Maximum Junction-to-Ambient t 10 s R 15 20 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. g. T = 25 C C S15-1523-Rev. A, 29-Jun-15 Document Number: 65689 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSiR696DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 125 - - V DS GS D V Temperature Coefficient V /T -96 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --8.1 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 125 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 125 V, V = 0 V, T = 70 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 20 A - 0.0096 0.0115 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 15 A - 0.0112 0.0135 GS D a Forward Transconductance g V = 10 V, I = 20 A - 37 - S fs DS D b Dynamic Input Capacitance C - 1410 - iss Output Capacitance C V = 75 V, V = 0 V, f = 1 MHz - 335 - pF oss DS GS Reverse Transfer Capacitance C -13- rss V = 75 V, V = 10 V, I = 20 A - 24.8 38 DS GS D Total Gate Charge Q g -19.4 29 Gate-Source Charge Q -7V = 75 V, V = 7.5 V, I = 20 A .8- nC gs DS GS D Gate-Drain Charge Q -7.6- gd Output Charge Q V = 75 V, V = 0 V - 75 113 oss DS GS Gate Resistance R f = 1 MHz 0.8 1.9 3.5 g Turn-On Delay Time t -10 20 d(on) Rise Time t -17 34 r V = 75 V, R = 3.75 DD L I 20 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g 836 d(off) Fall Time t -7 14 f ns Turn-On Delay Time t -12 24 d(on) Rise Time t -19 38 r V = 75 V, R = 3.75 DD L I 20 A, V = 7.5 V, R = 1 Turn-Off Delay Time t -1D GEN g 734 d(off) Fall Time t -8 16 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 60 S C A Pulse Diode Forward Current (t = 100 s) I -- 150 SM Body Diode Voltage V I = 5 A - 0.77 1.1 V SD S Body Diode Reverse Recovery Time t - 69 138 ns rr Body Diode Reverse Recovery Charge Q - 141 280 nC rr I = 20 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -39 - a ns Reverse Recovery Rise Time t -30 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1523-Rev. A, 29-Jun-15 Document Number: 65689 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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