X-On Electronics has gained recognition as a prominent supplier of SIR812DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR812DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR812DP-T1-GE3 Vishay

SIR812DP-T1-GE3 electronic component of Vishay
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Part No.SIR812DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 60A 104W 1.45mohm @ 10V
Datasheet: SIR812DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.925 ea
Line Total: USD 2.92 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.6746

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9323

0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9323

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.925
10 : USD 1.1867
100 : USD 0.8016
500 : USD 0.7297
1000 : USD 0.6445
3000 : USD 0.6281
6000 : USD 0.6271
9000 : USD 0.6209
24000 : USD 0.6024

   
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We are delighted to provide the SIR812DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR812DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiR812DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested g 0.00145 at V = 10 V 60 GS 30 109 nC Material categorization: 0.00200 at V = 4.5 V 60 GS for definitions of compliance please see PowerPAK SO-8 Single www.vishay.com/doc 99912 D D 8 APPLICATIONS D D 7 D 6 Motor control 5 Industrial Load switch G 1 ORing 2 S 3 S 1 4 S G S Top View Bottom View N-Channel MOSFET Ordering Information: SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 48.9 A b, c T = 70 C 39 A A Pulsed Drain Current (t = 100 s) I 400 DM a T = 25 C 60 C Continuous Source-Drain Diode Current I S b, c T = 25 C 5.6 A Single Pulse Avalanche Current I 25 AS L = 0.1 mH Single Pulse Avalanche Energy E 31.2 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, f Maximum Junction-to-Ambient t 10 s R 15 20 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 C/W. S15-1543-Rev. B, 29-Jun-15 Document Number: 63551 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSiR812DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -34 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --5.7- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1 - 2.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 - - A D(on) DS GS V = 10 V, I = 20 A - 0.00110 0.00145 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A - 0.00160 0.00200 GS D a Forward Transconductance g V = 15 V, I = 20 A - 121 - S fs DS D b Dynamic Input Capacitance C - 10 240 - iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz - 1130 - pF oss DS GS Reverse Transfer Capacitance C - 1180 - rss V = 15 V, V = 10 V, I = 20 A - 223 335 DS GS D Total Gate Charge Q g - 109 164 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A -22.8 - gs DS GS D Gate-Drain Charge Q -43.3- gd Gate Resistance R f = 1 MHz 0.3 1.05 2 g Turn-On Delay Time t -15 30 d(on) Rise Time t -16 32 V = 15 V, R = 0.75 r DD L I 20 A, V = 10 V, R = 1 Turn-Off Delay Time t -8D GEN g 0150 d(off) Fall Time t -20 40 f ns Turn-On Delay Time t -43 80 d(on) Rise Time t - 102 180 V = 15 V, R = 0.75 r DD L I 20 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -7D GEN g 0120 d(off) Fall Time t -32 60 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 60 S C A a Pulse Diode Forward Current I -- 100 SM Body Diode Voltage V I = 5 A - 0.68 1.1 V SD S Body Diode Reverse Recovery Time t -38 76 ns rr Body Diode Reverse Recovery Charge Q -23 46 nC rr I = 20 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -17 - a ns Reverse Recovery Rise Time t -21 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1543-Rev. B, 29-Jun-15 Document Number: 63551 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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