New Product SiR818DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R () Q (Typ.) I (A) DS DS(on) g Definition D g TrenchFET Gen III Power MOSFET 0.0028 at V = 10 V GS 50 30 30.5 nC 100 % R and UIS Tested g g 0.0033 at V = 4.5 V 50 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 Low-Side Switch for DC/DC Converters - Notebook PC - Servers S 6.15 mm 5.15 mm - POL 1 S 2 ORing S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View Ordering Information: SiR818DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS g T = 25 C C 50 g T = 70 C C 50 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 32 b, c T = 70 C A 25 A I Pulsed Drain Current (t = 300 s) 80 DM g T = 25 C C 50 Continuous Source-Drain Diode Current I S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 50 AS L = 0.1 mH E Single Pulse Avalanche Energy 125 mJ AS T = 25 C 69 C T = 70 C 44 C P Maximum Power Dissipation W D b, c T = 25 C 5.2 A b, c T = 70 C A 3.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. g. Package limited. Document Number: 67846 www.vishay.com S12-0216-Rev. B, 30-Jan-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR818DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 12.4V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0023 0.0028 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0027 0.0033 GS D a g V = 10 V, I = 20 A 104 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3660 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 710 pF oss DS GS C Reverse Transfer Capacitance 290 rss V = 15 V, V = 10 V, I = 20 A 63 95 DS GS D Q Total Gate Charge g 30.5 63 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 8.3 gs DS GS D Q Gate-Drain Charge 9.6 gd Gate Resistance R f = 1 MHz 0.2 0.45 0.9 g t Turn-On Delay Time 14 28 d(on) Rise Time t 15 30 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 28 50 d(on) t Rise Time V = 10 V, R = 1 23 45 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) t Fall Time 12 24 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 80 Pulse Diode Forward Current SM Body Diode Voltage V I = 4 A 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 29 55 ns rr Q Body Diode Reverse Recovery Charge 22 44 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67846 2 S12-0216-Rev. B, 30-Jan-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000