SiR850DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS a 0.007 at V = 10 V 100 % R Tested GS 30 COMPLIANT g 25 8.4 nC 100 % UIS Tested a 0.009 at V = 4.5 V 30 GS APPLICATIONS PowerPAK SO-8 Synchronous Buck - High-Side S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 25 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C a T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 20.1 A A b, c T = 70 C 16.1 A Pulsed Drain Current I 70 DM Avalanche Current I 35 AS L = 0.1 mH Avalanche Energy E mJ 61 AS a T = 25 C 30 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 4 A T = 25 C 41.7 C T = 70 C 26.7 C Maximum Power Dissipation P W D b, c T = 25 C 4.8 A b, c T = 70 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 21 26 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.0 thJC Notes: a. Based on T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiR850DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V /T V Temperature Coefficient 27 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0058 0.007 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0073 0.009 GS D a g V = 15 V, I = 20 A Forward Transconductance 85 S fs DS D b Dynamic Input Capacitance C 1120 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 290 pF oss DS GS Reverse Transfer Capacitance C 100 rss V = 12.5 V, V = 10 V, I = 20 A 19 30 DS GS D Q Total Gate Charge g 8.4 13 nC Gate-Source Charge Q 3.3 V = 12.5 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 2.0 gd Gate Resistance R f = 1 MHz 1.0 2.0 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 12.5 V, R = 12.5 20 30 r DD L I 1.0 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) t Fall Time 11 20 f ns t Turn-On Delay Time 14 25 d(on) t Rise Time V = 12.5 V, R = 12.5 15 25 r DD L I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) t Fall Time 815 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.75 1.2 V SD S GS t Body Diode Reverse Recovery Time 23 45 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 4.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68825 2 S-82287-Rev. B, 22-Sep-08