X-On Electronics has gained recognition as a prominent supplier of SIR873DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR873DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR873DP-T1-GE3 Vishay

SIR873DP-T1-GE3 electronic component of Vishay
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Part No.SIR873DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: TrenchFET Gen IV Power MOSFET P-Channel Single -150V VDS ±20V VGS -29A ID 8-Pin PowerPAK SOIC T/R
Datasheet: SIR873DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8857 ea
Line Total: USD 1.89 
Availability - 2403
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2403
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.8857
10 : USD 1.6081
30 : USD 1.455
100 : USD 1.2827
500 : USD 1.2042
1000 : USD 1.1698

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIR873DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR873DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiR873DP www.vishay.com Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET power MOSFET D 8 D 7 Very low R minimizes power loss DS(ON) D 6 from conduction 5 100 % R and UIS tested g Material categorization: 1 for definitions of compliance please see 2 S www.vishay.com/doc 99912 3 S 4 S 1 G APPLICATIONS S Top View Bottom View Active clamp in DC/DC PRODUCT SUMMARY power supplies G V (V) -150 DS Battery protection R max. () at V = 10 V 0.0475 DS(on) GS Load switch Q typ. (nC) 31.8 g I (A) -29 P-Channel MOSFET D Motor drive control Configuration Single D ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiR873DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -150 DS V Gate-source voltage V 20 GS T = 25 C -37 C T = 70 C -29.6 C Continuous drain current (T = 150 C) I J D b, c T = 25 C -9 A b, c T = 70 C -7.2 A A Pulsed drain current (t = 100 s) I 50 DM = 25 C 37 T C Continuous source-drain diode current I S b, c T = 25 C 5.6 A Single pulse avalanche current I -40 AS L = 0.1 mH Single pulse avalanche energy E 80 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum power dissipation P W D b, c T = 25 C 6.25 A b, c T = 70 C 4 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 10 s R 15 20 thJA C/W Maximum junction-to-case (drain) Steady state R 0.9 1.2 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 C/W g. T = 25 C C S17-1080-Rev. A, 17-Jul-17 Document Number: 75954 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm SiR873DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -150 - - V DS GS D V temperature coefficient V /T I = -250 A - -92 - DS DS J D mV/C V temperature coefficient V /T I = -250 A - 6.8 - GS(th) GS(th) J D Gate-source threshold voltage V V = V , I = -250 A -2 - -4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - -100 nA GSS DS GS V = -150 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -150 V, V = 0 V, T = 70 C - - -15 DS GS J a On-state drain current I V -10 V, V = -10 V -20 - - A D(on) DS GS a Drain-source on-state resistance R V = -10 V, I = -10 A - 0.0395 0.0475 DS(on) GS D a Forward transconductance g V = -15 V, I = -10 A - 12 - S fs DS D b Dynamic Input capacitance C - 1805 - iss Output capacitance C V = -75 V, V = 0 V, f = 1 MHz - 332 - pF oss DS GS Reverse transfer capacitance C - 14.5 - rss V = -75 V, V = -10 V, I = -10 A - 31.8 48 DS GS D Total gate charge Q g -25 - Gate-source charge Q V = -75 V, V = -7.5 V, I = -10 A -9.2 - nC gs DS GS D Gate-drain charge Q -9.5 - gd Output charge Q V = -75 V, V = 0 V - 68.8 - oss DS GS Gate resistance R f = 1 MHz 1.9 3.4 6 g Turn-on delay time t -15 30 d(on) Rise time t -7 14 V = -75 V, R = 7.5 , I -10 A, r DD L D ns V = 10 V, R = 1 Turn-off delay time t GEN g -28 56 d(off) Fall time t -9 18 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 37 S C A Pulse diode forward current I -- 50 SM Body diode voltage V I = -5 A, V = 0 V - -0.79 -1.1 V SD S GS Body diode reverse recovery time t - 75 150 ns rr Body diode reverse recovery charge Q - 245 490 nC rr I = -5 A, di/dt = -100 A/s, T = 25 C F J Reverse recovery fall time t -58 - a ns Reverse recovery rise time t -17 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1080-Rev. A, 17-Jul-17 Document Number: 75954 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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