DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits I Max Rated to +175C Ideal for High Ambient Temperature D V R Max (BR)DSS DS(ON) T = +25C Environments C 100% Unclamped Inductive Switching Ensures More Reliable 50m V = 10V 16.7A GS and Robust End Application 60V Low R Minimizes Power Losses DS(ON) 65m V = 4.5V 14.6A GS Low Q Minimizes Switching Losses G Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications This MOSFET is designed to meet the stringent requirements of Case: SO-8 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Engine Management Systems Terminal Connections Indicator: See Diagram Body Control Electronics Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) D 1 D 2 SO-8 S1 D1 G1 D1 G1 G2 S2 D2 D2 G2 S1 S2 Equivalent Circuit Top View Top View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMNH6042SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMNH6042SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 5.3 A I D State 4.4 T = +70C A Continuous Drain Current (Note 7) V = 10V GS Steady T = +25C 16.7 C I A D State 14 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 35 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 2.3 A S Avalanche Current (Note 8) L = 10mH 3.5 A I AS Avalanche Energy (Note 8) L = 10mH 65 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.5 W D Steady State 100 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 61 Total Power Dissipation (Note 7) P 2.1 W D Steady State 72 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 44 C/W Thermal Resistance, Junction to Case (Note 7) R 7.25 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 3.0 V VGS(TH) VDS = VGS, ID = 250A 34 50 V = 10V, I = 5.1A GS D Static Drain-Source On-Resistance R m DS(ON) 45 65 V = 4.5V, I = 4.4A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance pF C 584 ISS V = 25V, V = 0V, DS GS Output Capacitance C 83 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 24 pF RSS 3.8 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 4.2 Total Gate Charge (V = 4.5V) Q nC GS G 8.8 Total Gate Charge (V = 10V) Q nC GS G V = 44V, I = 5.2A DS D 1.8 Gate-Source Charge Q nC GS Gate-Drain Charge 1.8 nC Q GD Turn-On Delay Time 3.4 ns t D(ON) Turn-On Rise Time 1.9 ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time 10.1 ns t R = 6, I = 1A D(OFF) G D 4.5 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time t 12.9 ns RR I = 2.6A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 5.4 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6042SSDQ August 2016 Diodes Incorporated www.diodes.com Document number: DS37829 Rev. 4 - 2