X-On Electronics has gained recognition as a prominent supplier of DMNH6042SSDQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMNH6042SSDQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMNH6042SSDQ-13 Diodes Incorporated

DMNH6042SSDQ-13 electronic component of Diodes Incorporated
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Part No.DMNH6042SSDQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMNH6042SSDQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2075 ea
Line Total: USD 1.21 
Availability - 3663
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
292
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6985
10 : USD 0.6145
30 : USD 0.5745
100 : USD 0.5324
500 : USD 0.5077
1000 : USD 0.4963

3663
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2075
10 : USD 0.8982
100 : USD 0.636
500 : USD 0.5117
1000 : USD 0.4784

   
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We are delighted to provide the DMNH6042SSDQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMNH6042SSDQ-13 and other electronic components in the MOSFETs category and beyond.

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DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits I Max Rated to +175C Ideal for High Ambient Temperature D V R Max (BR)DSS DS(ON) T = +25C Environments C 100% Unclamped Inductive Switching Ensures More Reliable 50m V = 10V 16.7A GS and Robust End Application 60V Low R Minimizes Power Losses DS(ON) 65m V = 4.5V 14.6A GS Low Q Minimizes Switching Losses G Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications This MOSFET is designed to meet the stringent requirements of Case: SO-8 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Engine Management Systems Terminal Connections Indicator: See Diagram Body Control Electronics Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) D 1 D 2 SO-8 S1 D1 G1 D1 G1 G2 S2 D2 D2 G2 S1 S2 Equivalent Circuit Top View Top View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMNH6042SSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMNH6042SSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 5.3 A I D State 4.4 T = +70C A Continuous Drain Current (Note 7) V = 10V GS Steady T = +25C 16.7 C I A D State 14 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 35 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 2.3 A S Avalanche Current (Note 8) L = 10mH 3.5 A I AS Avalanche Energy (Note 8) L = 10mH 65 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.5 W D Steady State 100 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 61 Total Power Dissipation (Note 7) P 2.1 W D Steady State 72 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 44 C/W Thermal Resistance, Junction to Case (Note 7) R 7.25 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 3.0 V VGS(TH) VDS = VGS, ID = 250A 34 50 V = 10V, I = 5.1A GS D Static Drain-Source On-Resistance R m DS(ON) 45 65 V = 4.5V, I = 4.4A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 2.6A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance pF C 584 ISS V = 25V, V = 0V, DS GS Output Capacitance C 83 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 24 pF RSS 3.8 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 4.2 Total Gate Charge (V = 4.5V) Q nC GS G 8.8 Total Gate Charge (V = 10V) Q nC GS G V = 44V, I = 5.2A DS D 1.8 Gate-Source Charge Q nC GS Gate-Drain Charge 1.8 nC Q GD Turn-On Delay Time 3.4 ns t D(ON) Turn-On Rise Time 1.9 ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time 10.1 ns t R = 6, I = 1A D(OFF) G D 4.5 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time t 12.9 ns RR I = 2.6A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 5.4 nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6042SSDQ August 2016 Diodes Incorporated www.diodes.com Document number: DS37829 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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