TM V = 100V IXTH130N10T TrenchMV DSS I = 130A IXTQ130N10T Power MOSFET D25 R 9.1m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 100 V DSS J D (TAB) S V T = 25C to 175C, R = 1M 100 V DGR J GS V Transient 20 V GSM TO-3P (IXTQ) I T = 25C 130 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25C, pulse width limited by T 300 A DM C JM I T = 25C65 A A C G D E T = 25C 500 mJ AS C S (TAB) P T = 25C 360 W D C G = Gate D = Drain T -55 ... +175 C S = Source TAB = Drain J T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062in.) from case for 10s 300 C L Plastic body for 10 seconds 260 C z Ultra-low On Resistance M Mounting torque (TO-247)(TO-3P) 1.13 / 10 Nm/lb.in. z d Unclamped Inductive Switching (UIS) rated Weight TO-247 6.0 g z TO-3P 5.5 g Low package inductance - easy to drive and to protect z 175 C Operating Temperature Advantages z Easy to mount Symbol Test Conditions Characteristic Values z Space savings (T = 25C unless otherwise specified) Min. Typ. Max. J z High power density BV V = 0V, I = 250A 100 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D z Automotive I V = 20V, V = 0V 200 nA GSS GS DS - Motor Drives I V = V 5 A DSS DS DSS - High Side Switch - 12V Battery V = 0V T = 150C 250 A GS J - ABS Systems R V = 10V, I = 25A, Notes 1, 2 9.1 m DS(on) GS D z DC/DC Converters and Off-line UPS z Primary- Side Switch z High Current Switching Applications 2008 IXYS CORPORATION, All rights reserved DS99708A(07/08)IXTH130N10T IXTQ130N10T Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 93 S fs DS D C 5080 pF iss P 1 2 3 C V = 0V, V = 25V, f = 1MHz 635 pF oss GS DS C 95 pF rss t 30 ns d(on) Resistive Switching Times t 47 ns r V = 10V, V = 0.5 V , I = 25A GS DS DSS D t 44 ns d(off) e R = 5 (External) G t 28 ns f Terminals: 1 - Gate 2 - Drain Q 104 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 25A 30 nC gs GS DS DSS D A 4.7 5.3 .185 .209 Q 29 nC A 2.2 2.54 .087 .102 gd 1 A 2.2 2.6 .059 .098 2 R 0.42 C/W thJC b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.25 C/W thCH b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 T = 25C unless otherwise specified) Min. Typ. Max. L1 4.50 .177 J P 3.55 3.65 .140 .144 I V = 0V 130 A Q 5.89 6.40 0.232 0.252 S GS R 4.32 5.49 .170 .216 I Repetitive, pulse width limited by T 350 A SM JM V I = 25A, V = 0V, Note 1 1.0 V SD F GS TO-3P (IXTQ) Outline t 67 ns rr I = 25A, V = 0V F GS I 4.7 A RM -di/dt = 100A/s V = 50V R Q 160 nC rr Notes: 1. Pulse test, t 300s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537