X-On Electronics has gained recognition as a prominent supplier of SIR876ADP-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SIR876ADP-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIR876ADP-T1-GE3 Vishay

SIR876ADP-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SIR876ADP-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 100V 10.8mOhm@10V 40A N-Ch MV T-FET
Datasheet: SIR876ADP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5525 ea
Line Total: USD 1.55

Availability - 322
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1

 SIR876ADP-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
322
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 1.5525
10 : USD 1.3225
100 : USD 1.0845
250 : USD 1.0212
500 : USD 0.9361
1000 : USD 0.8165
3000 : USD 0.8073
6000 : USD 0.8027
9000 : USD 0.7831

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIR876ADP-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR876ADP-T1-GE3 and other electronic components in the MOSFET category and beyond.

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Additional Infomation About Product

The Vishay SIR876ADP-T1-GE3 is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) featuring a 100V drain-to-source voltage rating and 10.8mOhm @ 10V on-state resistance. It also has a 40A maximum drain current (Id) rating and a maximum junction-to-ambient thermal resistance of 69°C/W. The low resistance and high current capability of this device makes it suitable for a broad range of DC/DC switching applications, including power distribution switch, synchronous rectification, motor control, large current load switch, and more. Additionally, its low on-state resistance contributes to high power efficiency, reduced heating, and improved power density.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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