The Vishay SIR876ADP-T1-GE3 is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) featuring a 100V drain-to-source voltage rating and 10.8mOhm @ 10V on-state resistance. It also has a 40A maximum drain current (Id) rating and a maximum junction-to-ambient thermal resistance of 69°C/W. The low resistance and high current capability of this device makes it suitable for a broad range of DC/DC switching applications, including power distribution switch, synchronous rectification, motor control, large current load switch, and more. Additionally, its low on-state resistance contributes to high power efficiency, reduced heating, and improved power density.