X-On Electronics has gained recognition as a prominent supplier of SIR876ADP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR876ADP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR876ADP-T1-GE3 Vishay

SIR876ADP-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIR876ADP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 10.8mOhm@10V 40A N-Ch MV T-FET
Datasheet: SIR876ADP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1395 ea
Line Total: USD 1.14 
Availability - 2296
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.923

2296
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1395
10 : USD 0.9444
30 : USD 0.8451
100 : USD 0.7476
500 : USD 0.6158
1000 : USD 0.587

11349
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.277
10 : USD 1.474
100 : USD 1.0549
250 : USD 1.045
500 : USD 0.8965
1000 : USD 0.8096
3000 : USD 0.7722
6000 : USD 0.759
9000 : USD 0.7579

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
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We are delighted to provide the SIR876ADP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR876ADP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SIR876ADP-T1-GE3 is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) featuring a 100V drain-to-source voltage rating and 10.8mOhm @ 10V on-state resistance. It also has a 40A maximum drain current (Id) rating and a maximum junction-to-ambient thermal resistance of 69°C/W. The low resistance and high current capability of this device makes it suitable for a broad range of DC/DC switching applications, including power distribution switch, synchronous rectification, motor control, large current load switch, and more. Additionally, its low on-state resistance contributes to high power efficiency, reduced heating, and improved power density.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Vishay / MCB Industrie
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Vishay / Milwaukee
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