New Product SiR878ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Max. Q (Typ.) I (A) DS DS(on) g Definition D TrenchFET Power MOSFET 0.014 at V = 10 V 40 GS 100 % R and UIS Tested g 0.0148 at V = 7.5 V 100 38 13.9 nC GS Compliant to RoHS Directive 2002/95/EC 0.018 at V = 4.5 V 34 GS APPLICATIONS PowerPAK SO-8 DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge DC/DC Industrial S 6.15 mm 5.15 mm 1 S 2 S D 3 G 4 D 8 D 7 D G 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR878ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 40 C T = 70 C 32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 13.3 b, c T = 70 C A 10.6 A I Pulsed Drain Current (t = 300 s) 80 DM T = 25 C 40 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 44.5 C T = 70 C 28.5 C Maximum Power Dissipation P W D b, c T = 25 C A 5 b, c T = 70 C A 3.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 thJA Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 63369 www.vishay.com S11-1999-Rev. B, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiR878ADP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 V DS GS D V Temperature Coefficient V /T 64 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.011 0.014 GS D a R V = 7.5 V, I = 12 A 0.012 0.0148 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 10 A 0.014 0.018 GS D a g V = 10 V, I = 15 A 44 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1275 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 500 pF oss DS GS Reverse Transfer Capacitance C 38 rss V = 50 V, V = 10 V, I = 10 A 27.9 42 DS GS D Q Total Gate Charge V = 50 V, V = 7.5 V, I = 10 A 21.6 33 g DS GS D 13.9 21 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 10 A 4.2 gs DS GS D Gate-Drain Charge Q 6.3 gd Q V = 50 V, V = 0 V Output Charge 40 60 oss DS GS R Gate Resistance f = 1 MHz 0.2 1.05 2.1 g t Turn-On Delay Time 10 20 d(on) t Rise Time V = 50 V, R = 5 11 22 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 50 d(off) t Fall Time 816 f ns Turn-On Delay Time t 12 24 d(on) t Rise Time V = 50 V, R = 5 13 26 r DD L I 10 A, V = 7.5 V, R = 1 Turn-Off Delay Time t 25 50 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A a I 80 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.76 1.1 V SD S Body Diode Reverse Recovery Time t 36 70 ns rr Q Body Diode Reverse Recovery Charge 38 76 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 22 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63369 S11-1999-Rev. B, 10-Oct-11 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000