X-On Electronics has gained recognition as a prominent supplier of SIRA16DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIRA16DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIRA16DP-T1-GE3 Vishay

SIRA16DP-T1-GE3 electronic component of Vishay
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Part No.SIRA16DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds TrenchFET PowerPAK SO-8
Datasheet: SIRA16DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.2266 ea
Line Total: USD 1359.6 
Availability - 0
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 6000
6000 : USD 0.315

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7854
10 : USD 0.6688
100 : USD 0.5123
500 : USD 0.405
1000 : USD 0.324

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.2266
12000 : USD 0.2167

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIRA16DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRA16DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiRA16DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET a,g V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g 0.0068 at V = 10 V 16 GS Material categorization: 30 13.2 nC 0.0097at V = 4.5 V 16 For definitions of compliance please see GS www.vishay.com/doc 99912 PowerPAK SO-8 APPLICATIONS D DC/DC Conversion S 5.15 mm 6.15 mm High Current Power Rails in Computing 1 S 2 Load Switching S 3 G Battery Protection 4 G DC/AC Inverters D 8 D 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiRA16DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage + 20, - 16 GS g T = 25 C C 16 g T = 70 C C 16 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 16 b, c T = 70 C A 14.2 A I Pulsed Drain Current (t = 100 s) 70 DM g T = 25 C C 16 I Continuous Source-Drain Diode Current S b, c T = 25 C A 3.5 I Single Pulse Avalanche Current 15 AS L = 0.1 mH Single Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 29.7 C T = 70 C 19 C P Maximum Power Dissipation W D b, c T = 25 C A 3.9 b, c T = 70 C A 25 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 27 32 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 3.5 4.2 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. g. Package limited. Document Number: 62901 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-2078-Rev. A, 30-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiRA16DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 18 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 12.3V GS(th) DS GS D I V = 0 V, V = + 20, - 16 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 20 A D(on) DS GS V = 10 V, I = 15 A 0.0056 0.0068 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0077 0.0097 GS D a g V = 10 V, I = 15 A 60 S Forward Transconductance fs DS D b, d Dynamic C Input Capacitance 2060 iss C Output Capacitance 543 oss V = 15 V, V = 0 V, f = 1 MHz pF DS GS C Reverse Transfer Capacitance 47 rss C /C Ratio 0.023 0.046 rss iss V = 15 V, V = 10 V, I = 10 A 31 47 DS GS D Q Total Gate Charge g 13.2 20 V = 15 V, V = 4.5 V, I = 10 A DS GS D Q Gate-Source Charge 5.7 nC gs Q Gate-Drain Charge 2.2 gd Output Charge Q V = 15 V, V = 0 V 15.4 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.0 1.7 g t Turn-On Delay Time 21 42 d(on) Rise Time t 10 20 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 19 38 d(off) Fall Time t 816 f ns t Turn-On Delay Time 10 20 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 19 38 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 16 S C A I 70 Pulse Diode Forward Current (t = 100 s) SM Body Diode Voltage V I = 5 A 0.78 1.1 V SD S t Body Diode Reverse Recovery Time 28 55 ns rr Q Body Diode Reverse Recovery Charge I = 5 A, dI/dt = 100 A/s, 20 40 nC rr F T = 25 C t Reverse Recovery Fall Time J 14 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62901 For technical questions, contact: pmostechsupport vishay.com 2 S13-2078-Rev. A, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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