X-On Electronics has gained recognition as a prominent supplier of SIS412DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS412DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIS412DN-T1-GE3 Vishay

SIS412DN-T1-GE3 electronic component of Vishay
SIS412DN-T1-GE3 Vishay
SIS412DN-T1-GE3 MOSFETs
SIS412DN-T1-GE3  Semiconductors

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See Product Specifications
Part No. SIS412DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SIS412DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3121 ea
Line Total: USD 1.56 
Availability - 5548
Ship by Wed. 23 Apr to Mon. 28 Apr
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.389

5548
Ship by Wed. 23 Apr to Mon. 28 Apr
MOQ : 5
Multiples : 5
5 : USD 0.3121
50 : USD 0.2441
150 : USD 0.1844
500 : USD 0.1378
3000 : USD 0.1254
6000 : USD 0.1179

30153
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 1
Multiples : 1
1 : USD 0.7288
10 : USD 0.4538
100 : USD 0.3162
500 : USD 0.2695
1000 : USD 0.2431
3000 : USD 0.2156
6000 : USD 0.2145

2841
Ship by Mon. 14 Apr to Wed. 16 Apr
MOQ : 3
Multiples : 1
3 : USD 0.7322
25 : USD 0.658
36 : USD 0.5082
99 : USD 0.4802

2910
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.4004

2910
Ship by Wed. 16 Apr to Tue. 22 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.389

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SIS412DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS412DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SIS412DN-T1-GE3 is a PowerPAK 1212-8 MOSFET featuring a 30V drain-source voltage rating, a 20V gate-source voltage rating, and a 12A maximum continuous drain current. It is suitable for applications requiring high-power switching capabilities. The package is a TO-263 that is easy to solder and mount on surfaces. It also has a low on-resistance, making it ideal for use in power management circuits. The product is RoHS compliant and also features an exposed central pad for better mounting and dissipating of heat.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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