X-On Electronics has gained recognition as a prominent supplier of SIS412DN-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SIS412DN-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SIS412DN-T1-GE3 Vishay

SIS412DN-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIS412DN-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SIS412DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.218 ea
Line Total: USD 1.09

Availability - 6968
Ship by Wed. 07 Aug to Mon. 12 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1038
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4324
10 : USD 0.3982
25 : USD 0.396
100 : USD 0.3362
250 : USD 0.3342
500 : USD 0.3087
1000 : USD 0.2617

6805
Ship by Wed. 07 Aug to Mon. 12 Aug
MOQ : 5
Multiples : 5
5 : USD 0.218
50 : USD 0.1739
150 : USD 0.155
500 : USD 0.1314
3000 : USD 0.121
6000 : USD 0.1146

16748
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.644
10 : USD 0.537
100 : USD 0.3921
500 : USD 0.3277
1000 : USD 0.2725
3000 : USD 0.2473

2910
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 3
Multiples : 1
3 : USD 0.6721
25 : USD 0.6045
36 : USD 0.4667
98 : USD 0.4407

2910
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.2696

1038
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 30
Multiples : 1
30 : USD 0.396
100 : USD 0.3362
250 : USD 0.3342
500 : USD 0.3087
1000 : USD 0.2617

671
Ship by Wed. 31 Jul to Tue. 06 Aug
MOQ : 569
Multiples : 1
569 : USD 0.1729

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SIS412DN-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS412DN-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Vishay SIS412DN-T1-GE3 is a PowerPAK 1212-8 MOSFET featuring a 30V drain-source voltage rating, a 20V gate-source voltage rating, and a 12A maximum continuous drain current. It is suitable for applications requiring high-power switching capabilities. The package is a TO-263 that is easy to solder and mount on surfaces. It also has a low on-resistance, making it ideal for use in power management circuits. The product is RoHS compliant and also features an exposed central pad for better mounting and dissipating of heat.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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