X-On Electronics has gained recognition as a prominent supplier of SIS435DNT-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS435DNT-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIS435DNT-T1-GE3 Vishay

SIS435DNT-T1-GE3 electronic component of Vishay
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Part No.SIS435DNT-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V .0054ohm4.5V 30A P-Ch G-III
Datasheet: SIS435DNT-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7015 ea
Line Total: USD 0.7 
Availability - 2504
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2596
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4867
10 : USD 0.4671
25 : USD 0.465
100 : USD 0.3962
250 : USD 0.3942
500 : USD 0.3565
1000 : USD 0.3334

2504
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7015
10 : USD 0.6406
100 : USD 0.46
500 : USD 0.3841
1000 : USD 0.3496
3000 : USD 0.3301
6000 : USD 0.3289

2596
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 23
Multiples : 1
23 : USD 0.4671
25 : USD 0.465
100 : USD 0.3962
250 : USD 0.3942
500 : USD 0.3565
1000 : USD 0.3334

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the SIS435DNT-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS435DNT-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiS435DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET a V (V) R ( ) Max. Q (Typ.) I (A) Thin 0.8 mm max. height DS DS(on) g D 100 % R and UIS Tested a 0.0054 at V = - 4.5V g GS - 30 Material categorization: a 0.0060 at V = - 3.7 V GS - 30 - 20 57 nC For definitions of compliance please see a 0.0083 at V = - 2.5 V GS - 30 www.vishay.com/doc 99912 a 0.0140 at V = - 1.8 V GS - 30 APPLICATIONS S Thin PowerPAK 1212-8 Smart Phones, Tablet PCs, and Mobile Computing - Battery Switch S 33 3.3 mm 1 G - Load Switch S 2 S - Power Management 3 G - Battery Management 4 D 0.8 mm 8 D 7 D D 6 3.3 mm D P-Channel MOSFET 5 Bottom View Ordering Information: SiS435DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 30 C a T = 70 C - 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 22 A b, c T = 70 C - 17 A A Pulsed Drain Current (t = 300 s) I - 80 DM a T = 25 C - 30 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 3.1 A Avalanche Current I - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 39 C T = 70 C 25 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. Document Number: 63264 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0465-Rev. A, 04-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS435DNT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 16 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 0.9 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 13 A 0.0044 0.0054 GS D V = - 3.7 V, I = - 10 A 0.0048 0.0060 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 10 A 0.0065 0.0083 GS D V = - 1.8 V, I = - 5 A 0.0110 0.0140 GS D a g V = - 10 V, I = - 13 A 55 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5700 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 620 pF oss DS GS C Reverse Transfer Capacitance 585 rss V = - 10 V, V = - 8 V, I = - 20 A 98 180 DS GS D Q Total Gate Charge g 57 86 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 20 A 7.4 gs DS GS D Q Gate-Drain Charge 13.1 gd Gate Resistance R f = 1 MHz 0.8 3.8 7.6 g t Turn-On Delay Time 40 80 d(on) Rise Time t 30 60 V = - 10 V, R = 1 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 200 d(off) Fall Time t 30 60 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = - 10 V, R = 1 10 20 r DD L I - 10 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 110 220 d(off) t Fall Time 25 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 30 S C A I Pulse Diode Forward Current - 80 SM Body Diode Voltage V I = - 10 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 19 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63264 2 S13-0465-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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