SiS435DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET a V (V) R ( ) Max. Q (Typ.) I (A) Thin 0.8 mm max. height DS DS(on) g D 100 % R and UIS Tested a 0.0054 at V = - 4.5V g GS - 30 Material categorization: a 0.0060 at V = - 3.7 V GS - 30 - 20 57 nC For definitions of compliance please see a 0.0083 at V = - 2.5 V GS - 30 www.vishay.com/doc 99912 a 0.0140 at V = - 1.8 V GS - 30 APPLICATIONS S Thin PowerPAK 1212-8 Smart Phones, Tablet PCs, and Mobile Computing - Battery Switch S 33 3.3 mm 1 G - Load Switch S 2 S - Power Management 3 G - Battery Management 4 D 0.8 mm 8 D 7 D D 6 3.3 mm D P-Channel MOSFET 5 Bottom View Ordering Information: SiS435DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 30 C a T = 70 C - 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 22 A b, c T = 70 C - 17 A A Pulsed Drain Current (t = 300 s) I - 80 DM a T = 25 C - 30 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 3.1 A Avalanche Current I - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 39 C T = 70 C 25 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.2 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. Document Number: 63264 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0465-Rev. A, 04-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS435DNT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 16 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 0.9 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 13 A 0.0044 0.0054 GS D V = - 3.7 V, I = - 10 A 0.0048 0.0060 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 10 A 0.0065 0.0083 GS D V = - 1.8 V, I = - 5 A 0.0110 0.0140 GS D a g V = - 10 V, I = - 13 A 55 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5700 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 620 pF oss DS GS C Reverse Transfer Capacitance 585 rss V = - 10 V, V = - 8 V, I = - 20 A 98 180 DS GS D Q Total Gate Charge g 57 86 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 20 A 7.4 gs DS GS D Q Gate-Drain Charge 13.1 gd Gate Resistance R f = 1 MHz 0.8 3.8 7.6 g t Turn-On Delay Time 40 80 d(on) Rise Time t 30 60 V = - 10 V, R = 1 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 200 d(off) Fall Time t 30 60 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = - 10 V, R = 1 10 20 r DD L I - 10 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 110 220 d(off) t Fall Time 25 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 30 S C A I Pulse Diode Forward Current - 80 SM Body Diode Voltage V I = - 10 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 19 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63264 2 S13-0465-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000