New Product SiS436DN Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0105 at V = 10 V TrenchFET Gen III Power MOSFET 16 GS 25 6.7 nC 100 % R Tested g 0.013 at V = 4.5 V 16 GS 100 % UIS Tested PowerPAK 1212-8 APPLICATIONS DC/DC Conversion S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiS436DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 25 DS V V Gate-Source Voltage 20 GS a, g T = 25 C 16 C g T = 70 C 16 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 13.6 A A b, c T = 70 C 10.7 A g I Pulsed Drain Current 32 DM I Avalanche Current 15 AS L = 0.1 mH Avalanche Energy E mJ 11.25 AS a, g T = 25 C 16 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 2.9 A T = 25 C 27.7 C T = 70 C 17.7 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 29 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.6 4.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 C/W. g. Package limited. Document Number: 64735 www.vishay.com S09-0320-Rev. A, 02-Mar-09 1New Product SiS436DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V /T V Temperature Coefficient 22 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.2 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 25 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 10 A 0.0085 0.0105 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.0105 0.013 GS D a g V = 10 V, I = 10 A Forward Transconductance 45 S fs DS D b Dynamic Input Capacitance C 855 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 255 pF oss DS GS Reverse Transfer Capacitance C 95 rss V = 10 V, V = 10 V, I = 10 A 14.3 22 DS GS D Q Total Gate Charge g 6.7 10 nC Gate-Source Charge Q 2.0 V = 15 V, V = 4.5 V, I = 10 A gs DS GS D Q Gate-Drain Charge 1.8 gd Gate Resistance R f = 1 MHz 0.2 0.9 1.8 g t Turn-On Delay Time 15 30 d(on) t Rise Time V = 10 V, R = 2 12 24 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 714 d(on) t Rise Time V = 10 V, R = 2 10 20 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 16 S C A I Pulse Diode Forward Current 32 SM Body Diode Voltage V I = 3 A, V = 0 V 0.80 1.2 V SD S GS t Body Diode Reverse Recovery Time 16 32 ns rr Body Diode Reverse Recovery Charge Q 816 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9.5 a ns Reverse Recovery Rise Time t 6.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64735 2 S09-0320-Rev. A, 02-Mar-09