SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance of f V (V) R ( ) (MAX.) I (A) Q (TYP.) DS DS(on) D g R , Q , Q and Q DS(on) g sw oss 0.058 at V = 10 V 20.2 GS 100 % R and UIS tested 150 7.6 nC g 0.085 at V = 7.5 V 16.6 GS Material categorization: For definitions of compliance please see PowerPAK 1212-8S www.vishay.com/doc 99912 3.3 mm 0.75 mm APPLICATIONS D S S Primary side switch 1 S 2 G 3.3 mm 3 Synchronous rectification 4 DC/DC conversion G Load switching D D 8 D Boost converters 7 D 6 Bottom View 5 DC/AC inverters Ordering Information: S SiS888DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 150 DS V Gate-Source Voltage V 20 GS T = 25 C 20.2 C T = 70 C 16 C Continuous Drain Current (T = 150 C) I J D a,b T = 25 C 5.3 A a,b T = 70 C 4.3 A A Pulsed Drain Current (t = 300 s) I 50 DM g T = 25 C 40 C Continuous Source-Drain Diode Current I S a,b T = 25 C 3.1 A Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a,b T = 25 C 3.7 A a,b T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C c,d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a,e Maximum Junction-to-Ambient t 10 s R 26 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C g. Package limited. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiS888DN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 150 V DS GS D V Temperature Coefficient V /T 97 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T -6.9 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 3 4.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 150 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 10 A 0.048 0.058 GS D a Drain-Source On-State Resistance R DS(on) V = 7.5 V, I = 7 A 0.066 0.085 GS D a Forward Transconductance g V = 15 V, I = 10 A 11 S fs DS D b Dynamic Input Capacitance C 420 iss Output Capacitance C 130V = 75 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 16 rss V = 75 V, V = 10 V, I = 10 A 9.5 14.5 DS GS D Total Gate Charge Q g 7.6 11.5 Gate-Source Charge Q 2.5V = 75 V, V = 7.5 V, I = 10 A nC gs DS GS D Gate-Drain Charge Q 3.6 gd Output Charge Q V = 75 V, V = 0 V 23.6 36 oss DS GS Gate Resistance R f = 1 MHz 0.4 1.3 2 g Turn-On Delay Time t 13 26 d(on) Rise Time t 11 22 r V = 75 V, R = 7.5 DD L I 10 A, V = 7.5 V, R = 1 D GEN g Turn-Off Delay Time t 14 28 d(off) Fall Time t 918 f ns Turn-On Delay Time t 12 24 d(on) Rise Time t 816 r V = 75 V, R = 7.5 DD L I 10 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t 13 26 d(off) Fall Time t 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 40 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 4 A, V = 0 V 0.85 1.2 V SD S GS Body Diode Reverse Recovery Time t 94 180 ns rr Body Diode Reverse Recovery Charge Q 190 380 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 35 a ns Reverse Recovery Rise Time t 59 b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000