X-On Electronics has gained recognition as a prominent supplier of SISA12ADN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISA12ADN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISA12ADN-T1-GE3 Vishay

Hot SISA12ADN-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SISA12ADN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 4.3mOhm10V 25A N-Ch
Datasheet: SISA12ADN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5501 ea
Line Total: USD 0.55 
Availability - 1526
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 SISA12ADN-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
1526
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5501
10 : USD 0.442
30 : USD 0.3963
100 : USD 0.3377
500 : USD 0.313
1000 : USD 0.2978

17719
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7711
10 : USD 0.5874
100 : USD 0.4411
500 : USD 0.3663
1000 : USD 0.3421
3000 : USD 0.3135
6000 : USD 0.3058
9000 : USD 0.3025

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 38
Multiples : 1
38 : USD 1.0872
50 : USD 0.9555
100 : USD 0.7232
200 : USD 0.6922
500 : USD 0.5623
1000 : USD 0.5102
3000 : USD 0.4339

808
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 247
Multiples : 1
247 : USD 0.581
500 : USD 0.4637

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SISA12ADN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISA12ADN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay Semiconductors SISA12ADN-T1-GE3 is a MOSFET with an N-channel configuration and 30V drain-source breakdown voltage. This MOSFET is capable of 4.3mOhm10V resistance and 25A current rating. It is an ideal device for use in battery-operated high-speed switching applications such as DC/DC converters. This part is manufactured by Vishay and is an industry recognized part used in a variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TECHNO
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