X-On Electronics has gained recognition as a prominent supplier of SISA12ADN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISA12ADN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISA12ADN-T1-GE3 Vishay

Hot SISA12ADN-T1-GE3 electronic component of Vishay
SISA12ADN-T1-GE3 Vishay
SISA12ADN-T1-GE3 MOSFETs
SISA12ADN-T1-GE3  Semiconductors

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See Product Specifications
Part No. SISA12ADN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 4.3mOhm10V 25A N-Ch
Datasheet: SISA12ADN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
544: USD 0.1807 ea
Line Total: USD 98.3 
Availability - 808
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 544  Multiples: 1
Pack Size: 1
Availability Price Quantity
8541
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 0.7455
10 : USD 0.5826
30 : USD 0.5115
100 : USD 0.3279
500 : USD 0.2984
1000 : USD 0.2807

17656
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.035
10 : USD 0.7238
25 : USD 0.6552
100 : USD 0.4719
250 : USD 0.4719
500 : USD 0.3927
1000 : USD 0.3586
3000 : USD 0.3146
6000 : USD 0.3146

2910
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 125
Multiples : 1
125 : USD 0.52
200 : USD 0.4966
500 : USD 0.4693
1000 : USD 0.3692
3000 : USD 0.295

808
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 544
Multiples : 1
544 : USD 0.1807

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SISA12ADN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISA12ADN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay Semiconductors SISA12ADN-T1-GE3 is a MOSFET with an N-channel configuration and 30V drain-source breakdown voltage. This MOSFET is capable of 4.3mOhm10V resistance and 25A current rating. It is an ideal device for use in battery-operated high-speed switching applications such as DC/DC converters. This part is manufactured by Vishay and is an industry recognized part used in a variety of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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