X-On Electronics has gained recognition as a prominent supplier of SISA18ADN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISA18ADN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISA18ADN-T1-GE3 Vishay

Hot SISA18ADN-T1-GE3 electronic component of Vishay
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Part No.SISA18ADN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 7.5mOhm10V 18A N-Ch G-IV
Datasheet: SISA18ADN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0479 ea
Line Total: USD 0.05 
Availability - 12
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0479
10 : USD 0.0471

1091
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2145
50 : USD 0.1877
150 : USD 0.1761
500 : USD 0.1463
3000 : USD 0.1399
6000 : USD 0.1361

42312
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.759
10 : USD 0.5049
100 : USD 0.2563
500 : USD 0.1925
45000 : USD 0.187

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SISA18ADN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISA18ADN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiSA18ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET f V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0075 at V = 10 V 38.3 GS Material categorization: 30 6.9 nC 0.0120 at V = 4.5 V 30.2 For definitions of compliance please see GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS D DC/DC Power Supplies S 3.30 mm 3.30 mm High Current Power Rails in Computing 1 S 2 Telecom POL and Bricks S 3 G Battery Protection 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View Ordering Information: SiSA18ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage + 20, - 16 GS T = 25 C 38.3 C T = 70 C 30.6 C I Continuous Drain Current (T = 150 C) D J a, b T = 25 C 15.3 A a, b T = 70 C 12.1 A A I Pulsed Drain Current (t = 300 s) 70 DM T = 25 C 18 C I Continuous Source-Drain Diode Current S a, b T = 25 C 2.9 A I Single Pulse Avalanche Current 10 AS L = 0.1 mH E Single Pulse Avalanche Energy 5 mJ AS T = 25 C 19.8 C T = 70 C 12.7 C P Maximum Power Dissipation W D a, b T = 25 C 3.2 A a, b T = 70 C 3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 10 s R Maximum Junction-to-Ambient 31 39 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 56.3 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C Document Number: 63259 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0112-Rev. A, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiSA18ADN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V /T V Temperature Coefficient 18.5 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.2 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = + 20 V, - 16 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 30 A D(on) DS GS V 10 V, I = 10 A 0.0060 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 8 A 0.0096 0.0120 GS D a Forward Transconductance g V = 15 V, I = 10 A 54 S fs DS D b Dynamic C Input Capacitance 1000 iss C Output Capacitance 287 pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance 34 rss C /C Ratio 0.034 0.068 rss iss V = 15 V, V = 10 V, I = 10 A 14.3 21.5 DS GS D Q Total Gate Charge g 6.9 10.5 Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 2.8 nC gs DS GS D Q Gate-Drain Charge 1.6 gd Output Charge Q V = 15 V, V = 0 V 7.8 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.6 3.2 g t Turn-On Delay Time 15 30 d(on) Rise Time t 10 20 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) t 714 Fall Time f ns t Turn-On Delay Time 11 22 d(on) t Rise Time V = 15 V, R = 1.5 918 r DD L 10 A, V = 10 V, R = 1 I Turn-Off Delay Time t D GEN g 15 30 d(off) t Fall Time 510 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 18 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 5 A, V 0 V 0.77 1.1 V SD S GS t Body Diode Reverse Recovery Time 19 35 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63259 For technical questions, contact: pmostechsupport vishay.com 2 S13-0112-Rev. A, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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