New Product SiSA18ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET f V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.0075 at V = 10 V 38.3 GS Material categorization: 30 6.9 nC 0.0120 at V = 4.5 V 30.2 For definitions of compliance please see GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS D DC/DC Power Supplies S 3.30 mm 3.30 mm High Current Power Rails in Computing 1 S 2 Telecom POL and Bricks S 3 G Battery Protection 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View Ordering Information: SiSA18ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage + 20, - 16 GS T = 25 C 38.3 C T = 70 C 30.6 C I Continuous Drain Current (T = 150 C) D J a, b T = 25 C 15.3 A a, b T = 70 C 12.1 A A I Pulsed Drain Current (t = 300 s) 70 DM T = 25 C 18 C I Continuous Source-Drain Diode Current S a, b T = 25 C 2.9 A I Single Pulse Avalanche Current 10 AS L = 0.1 mH E Single Pulse Avalanche Energy 5 mJ AS T = 25 C 19.8 C T = 70 C 12.7 C P Maximum Power Dissipation W D a, b T = 25 C 3.2 A a, b T = 70 C 3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 10 s R Maximum Junction-to-Ambient 31 39 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 56.3 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 C/W. f. Based on T = 25 C. C Document Number: 63259 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-0112-Rev. A, 21-Jan-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiSA18ADN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V /T V Temperature Coefficient 18.5 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.2 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = + 20 V, - 16 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 30 A D(on) DS GS V 10 V, I = 10 A 0.0060 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 8 A 0.0096 0.0120 GS D a Forward Transconductance g V = 15 V, I = 10 A 54 S fs DS D b Dynamic C Input Capacitance 1000 iss C Output Capacitance 287 pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance 34 rss C /C Ratio 0.034 0.068 rss iss V = 15 V, V = 10 V, I = 10 A 14.3 21.5 DS GS D Q Total Gate Charge g 6.9 10.5 Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 2.8 nC gs DS GS D Q Gate-Drain Charge 1.6 gd Output Charge Q V = 15 V, V = 0 V 7.8 oss DS GS R Gate Resistance f = 1 MHz 0.4 1.6 3.2 g t Turn-On Delay Time 15 30 d(on) Rise Time t 10 20 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) t 714 Fall Time f ns t Turn-On Delay Time 11 22 d(on) t Rise Time V = 15 V, R = 1.5 918 r DD L 10 A, V = 10 V, R = 1 I Turn-Off Delay Time t D GEN g 15 30 d(off) t Fall Time 510 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 18 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 5 A, V 0 V 0.77 1.1 V SD S GS t Body Diode Reverse Recovery Time 19 35 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63259 For technical questions, contact: pmostechsupport vishay.com 2 S13-0112-Rev. A, 21-Jan-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000