X-On Electronics has gained recognition as a prominent supplier of SIS443DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIS443DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIS443DN-T1-GE3 Vishay

SIS443DN-T1-GE3 electronic component of Vishay
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Part No.SIS443DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -40V .0117Ohm10V 35A P-Ch G-III
Datasheet: SIS443DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.639 ea
Line Total: USD 1.64 
Availability - 34500
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7399

2762
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1139
10 : USD 1.4905
25 : USD 1.4734
100 : USD 1.069
250 : USD 1.0582
500 : USD 0.8308
1000 : USD 0.8026

22405
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0497
10 : USD 1.5725
100 : USD 1.2449
500 : USD 1.0237
1000 : USD 0.7843
5000 : USD 0.7245

515
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2187
10 : USD 1.003
30 : USD 0.8943
100 : USD 0.7837
500 : USD 0.7191
1000 : USD 0.6849

34500
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.639
10 : USD 1.166
100 : USD 0.8833
500 : USD 0.7425
1000 : USD 0.6941
3000 : USD 0.649
6000 : USD 0.6325

2825
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.534
10 : USD 2.17
18 : USD 0.966
49 : USD 0.924

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SIS443DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIS443DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) 100% R and UIS Tested DS DS(on) D g g Material categorization: d 0.0117 at V = - 10 V - 35 GS For definitions of compliance please see - 40 41.5 nC d 0.0160 at V = - 4.5 V - 35 GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS Notebook Computers and Mobile S S 3.30 mm 3.30 mm Computing 1 S - Adaptor Switch 2 S 3 - Load Switch G G 4 - DC/DC Converter D - Power Management 8 D 7 D 6 D 5 Bottom View D Ordering Information: P-Channel MOSFET SiS443DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS d T = 25 C - 35 C d T = 70 C - 35 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 13.3 A a, b T = 70 C - 10.6 A A I - 80 Pulsed Drain Current (t = 300 s) DM d T = 25 C - 35 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 26 33 thJA C/W R Maximum Junction-to-Case Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 63253 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1708-Rev. C, 05-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS443DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 40 V DS GS D V Temperature Coefficient V /T - 34 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 2.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0097 0.0117 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0128 0.0160 GS D a g V = - 10 V, I = - 15 A 50 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4370 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 300 pF oss DS GS C Reverse Transfer Capacitance 285 rss V = - 20 V, V = - 10 V, I = - 10 A 90 135 DS GS D Q Total Gate Charge g 41.5 63 nC Q V = - 20 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 10.6 gs DS GS D Q Gate-Drain Charge 15.1 gd R Gate Resistance f = 1 MHz 0.4 1.7 3.4 g t Turn-On Delay Time 12 24 d(on) t V = - 20 V, R = 2 Rise Time 10 20 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 48 95 d(off) D GEN g t Fall Time 10 20 f ns t Turn-On Delay Time 45 90 d(on) t V = - 20 V, R = 2 Rise Time 40 80 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 50 100 d(off) D GEN g t Fall Time 12 24 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 35 S C A Pulse Diode Forward Current I - 80 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.77 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 19 38 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63253 2 S13-1708-Rev. C, 05-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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