SiS472DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, g V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0089 at V = 10 V 20 GS TrenchFET Power MOSFET 30 9.8 nC Optimized for High-Side Synchronous 0.0124 at V = 4.5 V 20 GS Rectifier Operation 100 % R Tested g PowerPAK 1212-8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D S 3.30 mm 3.30 mm APPLICATIONS 1 S 2 Notebook CPU Core S 3 - High-Side Switch G 4 D G 8 D 7 D 6 D 5 S Bottom View Ordering Information: SiS472DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS g T = 25 C 20 C g T = 70 C 20 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 15 A b, c T = 70 C 12 A A Pulsed Drain Current I 50 DM g T = 25 C 20 C Continuous Source-Drain Diode Current I S b, c T = 25 C 3.2 A Single Pulse Avalanche Current I 21 AS L = 0.1 mH Avalanche Energy E 22 mJ AS T = 25 C 28 C T = 70 C 18 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 29 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.6 4.5 thJC Notes: a. Base on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. g. Package limited. Document Number: 67307 www.vishay.com S10-2882-Rev. A, 20-Dec-10 1SiS472DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 28 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 15 A 0.0074 0.0089 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 13 A 0.0103 0.0124 GS D a Forward Transconductance g V = 15 V, I = 13 A 49 S fs DS D b Dynamic Input Capacitance C 997 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 195 pF oss DS GS Reverse Transfer Capacitance C 120 rss V = 15 V, V = 10 V, I = 15 A 19.5 30 DS GS D Total Gate Charge Q g 9.8 15 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 15 A 3.7 gs DS GS D Gate-Drain Charge Q 3.7 gd Gate Resistance R f = 1 MHz 0.2 1.2 2.4 g Turn-On Delay Time t 19 29 d(on) Rise Time t 19 29 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 19D GEN g 29 d(off) Fall Time t 13 20 f ns Turn-On Delay Time t 918 d(on) Rise Time t 918 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 18D GEN g 27 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 20 S C A a Pulse Diode Forward Current I 50 SM Body Diode Voltage V I = 10 A 0.85 1.2 V SD S Body Diode Reverse Recovery Time t 14 28 ns rr 510 nC Body Diode Reverse Recovery Charge Q rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67307 2 S10-2882-Rev. A, 20-Dec-10