SiS778DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e V (V) R () Max. I (A) Q (Typ.) Definition DS DS(on) D g SkyFET Monolithic TrenchFET Power 0.0050 at V = 10 V 35 GS 30 13.3 nC MOSFET and Schottky Diode 0.0062 at V = 4.5 V 35 GS 100 % R and UIS Tested g Low Thermal Resistance PowerPAK PowerPAK 1212-8 Package with Small Size and Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC S 3.30 mm 3.30 mm 1 S APPLICATIONS 2 S Notebook PC 3 G 4 - System and Memory D - Low Side 8 D 7 D D 6 D 5 Bottom View Schottky Diode G Ordering Information: N-Channel MOSFET SiS778DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS e T = 25 C 35 C e T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 20.5 A a, b T = 70 C 16.4 A A Pulsed Drain Current (t = 300 s) I 60 DM e = 25 C 35 T C Continuous Source-Drain Diode Current I S a, b T = 25 C 5.4 A Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 20 AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C 3.8 A a, b T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 63457 www.vishay.com S11-1903-Rev. A, 26-Sep-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiS778DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b Maximum Junction-to-Ambient t 10 s R 24 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 81 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 1 mA 30 V DS GS D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.008 0.1 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 0.8 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 10 A 0.004 0.005 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 7 A 0.0051 0.0062 GS D a Forward Transconductance g V = 10 V, I = 10 A 60 S fs DS D b Dynamic Input Capacitance C 1390 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 335 pF oss DS GS Reverse Transfer Capacitance C 145 rss V = 15 V, V = 10 V, I = 10 A 27.5 42.5 DS GS D Total Gate Charge Q g 13.3 20 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 10 A 3.1 gs DS GS D Gate-Drain Charge Q 4.4 gd Gate Resistance R f = 1 MHz 0.3 1.3 2.6 g Turn-On Delay Time t 16 32 d(on) Rise Time t 17 34 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 25D GEN g 50 d(off) Fall Time t 918 f ns Turn-On Delay Time t 11 22 d(on) Rise Time t 12 24 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 2040 D GEN g d(off) Fall Time t 918 f www.vishay.com Document Number: 63457 2 S11-1903-Rev. A, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000