Doc No. TT4-EA-14479 Revision. 2 Product Standards MOS FET SK830321KL SK830321KL Silicon N-channel MOS FET Unit: mm 3.3 For Load-switching / For DC-DC Converter 3.1 0.17 8 7 6 5 Features Low Drain-source On-state Resistance:RDS(on)typ = 24 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 3 4 0.3 0.85 Marking Symbol: 21 0.65 Packaging Embossed type (Thermo-compression sealing) : 5 000 pcs / reel (standard) 1. Source 5. Drain 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain Absolute Maximum Ratings Ta = 25 C Panasonic HSSO8-F3-B Parameter Symbol Rating Unit JEITA Drain to Source Voltage VDS 30 Code V Gate to Source Voltage VGS 20 *1 9 Ta=25 C, t =10 s *1 7 Internal Connection Ta=25 C, DC Drain Current ID A 18 Tc=25 C 88 77 66 55 *2 27 Pulsed, Tch<150 C *1 Total Power 2 Ta=25 C, DC PD W Dissipation 13 Tc=25 C Channel to Ambient Rth(ch-a) 62.5 Thermal Resistance C / W Channel to Case Rth(ch-c) 9.2 Channel Temperature Tch 150 Operating ambient temperature Topr -40 to +85 C 11 22 33 44 Storage Temperature Range Tstg -55 to +150 *3 IAR 4.5 A Avalanche Current (Single pulse) Pin Name *3 EAR 2.5 mJ Avalanche Energy (Single pulse) Note *1 Device mounted on a glass-epoxy board in Figure 1 1. Source 5. Drain *2 2. Source 6. Drain Pulse test: Ensure that the channel temperature does not exceed 150 C *3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial) 3. Source 7. Drain 4. Gate 8. Drain Figure 1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm Page 1of 6 Established : 2012-12-19 Revised : 2013-05-31 0.2 3.1 3.3Doc No. TT4-EA-14479 Revision. 2 Product Standards MOS FET SK830321KL Electrical Characteristics Ta = 25 C 3 C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1.0 mA, VGS = 0 V 30 V A Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 Gate-source Leakage Current IGSS 10 A VGS = 16 V, VDS = 0 V Gate-source Threshold Voltage Vth ID = 519 A, VDS = 10 V 1.3 3 V RDS(on)1 ID = 4.5 A, VGS = 10 V 17 24 Drain-source On-state Resistance m RDS(on)2 ID = 4.5 A, VGS = 4.5 V 24 30 Dynamic Characteristics Parameter Symbol Conditions Min Typ Max Unit Input Capacitance Ciss 470 658 VDS = 10 V, VGS = 0 V, Output Capacitance Coss 69 97 pF f = 1 MHz Reverse Transfer Capacitance Crss 38 61 *1 td(on) VDD = 15 V, VGS = 0 to 10 V 4 Turn-on Delay Time ns *1 tr ID = 4.5 A Rise Time 3 *1 td(off) VDD = 15 V, VGS = 10 to 0 V 31 Turn-off Delay Time ns *1 ID = 4.5 A tf 5 Fall Time Total Gate Charge Qg 3.9 VDD = 15 V, VGS = 0 to 4.5 V Gate to Source Charge Qgs 1.4 nC ID = 4.5 A Gate to Drain Charge Qgd 1.7 Gate Resistance rg f = 5 MHz 1.9 3 Body Diode Characteristic Parameter Symbol Conditions Min Typ Max Unit Diode Forward Voltage VSD IS = 4.5 A, VGS = 0 V 0.8 1.2 V Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2012-12-19 Revised : 2013-05-31