X-On Electronics has gained recognition as a prominent supplier of SK8403190L MOSFETs across the USA, India, Europe, Australia, and various other global locations. SK8403190L MOSFETs are a product manufactured by Panasonic. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SK8403190L Panasonic

SK8403190L electronic component of Panasonic
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See Product Specifications
Part No.SK8403190L
Manufacturer: Panasonic
Category: MOSFETs
Description: Panasonic MOSFET 30V N-ch Power MOSFET 3.3x3.25mm
Datasheet: SK8403190L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3797
10 : USD 0.6282
100 : USD 0.3521
500 : USD 0.324
1000 : USD 0.297
3000 : USD 0.2786
9000 : USD 0.2549
24000 : USD 0.2506
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SK8403190L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SK8403190L and other electronic components in the MOSFETs category and beyond.

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Doc No. TT4-EA-14210 Revision. 6 Product Standards MOS FET SK8403190L SK8403190L Silicon N-channel MOS FET Unit : mm 3.25 For Load-switching / For DC-DC Converter 3.05 0.22 8 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 1 234 0.3 1.0 Marking Symbol : 19 0.65 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Source 5. Drain 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain Absolute Maximum Ratings Ta = 25 C Panasonic HSSO8-F1-B JEITA Parameter Symbol Rating Unit Drain to Source Voltage VDS 30 Code V Gate to Source Voltage VGS 20 *1 14 Ta = 25 C, t = 10 s *1 10 Internal Connection Ta = 25 C, DC Drain Current ID A 19 Tc = 25 C 88 77 66 55 *2 42 Pulsed, Tch < 150 C *1 Total Power 2 Ta = 25 C, DC PD W Dissipation 19 Tc = 25 C Channel to Ambient Rth(ch-a) 62.5 Thermal Resistance C / W Channel to Case Rth(ch-c) 6.6 Channel Temperature Tch 150 Operating ambient temperature Topr -40 to +85 C 11 22 33 44 Storage Temperature Range Tstg -55 to +150 *3 IAR 7 A Avalanche Current (Single pulse) Pin Name *3 EAR 6 mJ Avalanche Energy (Single pulse) Note *1 Device mounted on a glass-epoxy board in Figure 1 1. Source 5. Drain *2 2. Source 6. Drain Pulse test: Ensure that the channel temperature does not exceed 150 C *3 VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial) 3. Source 7. Drain 4. Gate 8. Drain Figure 1 FR4 Glass-Epoxy Board 25.4 mm 25.4 mm 0.8 mm 1of 6 Page Established : 2012-09-08 Revised : 2014-10-30 0.25 3.05 3.3Doc No. TT4-EA-14210 Revision. 6 Product Standards MOS FET SK8403190L Electrical Characteristics Ta = 25 C 3 C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 30 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate-source Threshold Voltage Vth ID = 1.01 mA, VDS = 10 V 1 3 V RDS(on)1 ID = 7 A, VGS = 10 V 710 Drain-source On-state Resistance m RDS(on)2 ID = 7 A, VGS = 4.5 V 10 14 Dynamic Characteristics Parameter Symbol Conditions Min Typ Max Unit Input Capacitance Ciss 780 1 092 VDS = 10 V, VGS = 0 V Output Capacitance Coss 160 224 pF f = 1 MHz Reverse Transfer Capacitance Crss 61 98 *1 td(on) VDD = 15 V, VGS = 0 to 10 V 7 Turn-on Delay Time ns *1 tr ID = 7 A 3 Rise Time *1 td(off) VDD = 15 V, VGS = 10 to 0 V 34 Turn-off Delay Time ns *1 ID = 7 A tf 4 Fall Time Total Gate Charge Qg 6.3 VDD = 15 V, VGS = 0 to 4.5 V Gate to Source Charge Qgs 2.5 nC ID = 7 A Gate to Drain Charge Qgd 2.1 Gate resistance rg f = 5 MHz 1.2 3 Body Diode Characteristic Parameter Symbol Conditions Min Typ Max Unit Diode Forward Voltage VSD IS = 7 A, VGS = 0 V 0.8 1.2 V Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time 2of 6 Page Established : 2012-09-08 Revised : 2014-10-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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