NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 Features Low ON Resistance Low Gate Charge NDD04N50Z THERMAL RESISTANCE Parameter Symbol Value Unit Junction toCase (Drain) NDD04N50Z R 2.0 C/W JC JunctiontoAmbient Steady State (Note 3) NDD04N50Z R 40 JA (Note 2) NDD04N50Z1 80 2. Insertion mounted 3. Surface mounted on FR4 board using 1 sq. pad size, (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage BV V = 0 V, I = 1 mA 500 V DSS GS D Breakdown Voltage Temperature Coeffi- BV / Reference to 25C, 0.6 V/C DSS cient I = 1 mA T J D DraintoSource Leakage Current I 25C 1.0 A DSS V = 500 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 4) Static DraintoSource R V = 10 V, I = 1.5 A 2.3 2.7 DS(on) GS D OnResistance Gate Threshold Voltage V V = V , I = 50 A 3.0 4.5 V GS(th) DS GS D Forward Transconductance g V = 15 V, I = 1.5 A 2.1 S FS DS D DYNAMIC CHARACTERISTICS pF Input Capacitance (Note 5) C 246 308 370 iss V = 25 V, V = 0 V, DS GS Output Capacitance (Note 5) C 33 43 53 oss f = 1.0 MHz Reverse Transfer Capacitance (Note 5) C 7.0 9.0 11 rss Total Gate Charge (Note 5) Q 6.0 12 18 nC g GatetoSource Charge (Note 5) Q 1.3 2.6 4.0 gs V = 250 V, I = 3.4 A, DD D V = 10 V GS GatetoDrain (Miller) Charge (Note 5) Q 3.5 6.1 7.0 gd Plateau Voltage V 6.6 V GP Gate Resistance R 1.8 5.4 16.2 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 9.0 ns d(on) Rise Time t 9.0 r V = 250 V, I = 3.4 A, DD D V = 10 V, R = 5 GS G Turn Off Delay Time t 16 d(off) Fall Time t 10 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage V I = 3.4 A, V = 0 V 1.6 V SD S GS Reverse Recovery Time t 240 ns rr V = 0 V, V = 30 V GS DD I = 3.4 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 0.9 C rr 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design.