NDD60N745U1 N-Channel Power MOSFET 600 V, 745 m Features 100% Avalanche Tested NDD60N745U1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I =1mA 600 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 540 mV/C (BR)DSS J Temperature Coefficient DraintoSource Leakage Current I V = 600 V, V =0V T =25C 1 A DSS DS GS J T = 125C 100 J GatetoSource Leakage Current I V = 20 V 100 nA GSS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V =V , I = 250 A 2 3.2 4 V GS(TH) DS GS D Negative Threshold Temperature Co- V /T Reference to 25C, I = 250 A 7.6 mV/C GS(TH) J D efficient Static Drain-to-Source On Resistance R V =10V, I = 3.25 A 610 745 m DS(on) GS D Forward Transconductance g V =15V, I = 3.25 A 5.6 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance C 440 pF iss Output Capacitance C 27 oss V =50V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 1.5 rss Effective output capacitance, energy C 21 o(er) V = 0 V, V = 0 to 480 V GS DS related (Note 6) Effective output capacitance, time C I = constant, V = 0 V, 71 o(tr) D GS related (Note 7) V = 0 to 480 V DS nC Total Gate Charge Q 15 g Gate-to-Source Charge Q 2.9 gs V = 300 V, I = 6.8 A, V =10V DS D GS Gate-to-Drain Charge Q 7.3 gd Plateau Voltage V 5.3 V GP Gate Resistance R 4.4 g RESISTIVE SWITCHING CHARACTERISTICS (Note 5) Turn-on Delay Time t 8 ns d(on) Rise Time t 10 r V = 300 V, I = 6.8 A, DD D V =10V, R = 0 GS G Turn-off Delay Time t 19 d(off) Fall Time t 7 f SOURCEDRAIN DIODE CHARACTERISTICS Diode Forward Voltage V T =25C 0.90 1.6 V SD J I = 6.6 A, V =0V S GS T = 100C 0.82 J Reverse Recovery Time t 260 ns rr Charge Time t 130 a V =0V, V =30V GS DD I = 6.8 A, d /d = 100 A/ s S i t Discharge Time t 130 b Reverse Recovery Charge Q 2.1 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. 6. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS 7. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS