NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m, N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value Unit 3 Drain to Source Voltage V 250V DSS V Gate to Source Voltage V 30 GSS A Drain Current (DC) I 10 D Packing Type:TL Marking Drain Current (Pulse) A I 40 DP PW 10s, duty cycle1% Power Dissipation 1 P W D Tc=25 C 52 10N25 Junction Temperature Tj 150 C TL AZ LOT No. 55 to Storage Temperature Tstg C +150 Source Current (Body Diode) I 10A S 1 mJ Avalanche Energy (Single Pulse) * E 15.5 AS 4 Lead Temperature for Soldering C 4 T 260 L Purposes, 3mm from Case for 10 Seconds 2 1 Thermal Resistance Ratings 3 1 Parameter Symbol Value Unit DPAK IPAK 2 3 Junction to Case Steady State R 2.40 JC C/W 2 Junction to Ambient * R 125 JA 1 Note : * V =50V, L=1mH, I =5A (Fig.1) DD AV 2 * Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Ordering & Package Information Device Package Shipping Memo DPAK(TP-FA), NDDP010N25AZT4H 700pcs. / reel Pb-Free SC-63, TO-252 and IPAK(TP), NDDP010N25AZ-1H 500pcs. / bag Halogen Free SC-64, TO-251 Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : November 2014 - Rev. 2 NDDP010N25AZ/D NDDP010N25AZ Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 250 V BR DSS D GS Zero-Gate Voltage Drain Current I V =250V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =24V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2.5 4.5V GS DS D Forward Transconductance g V =10V, I=5A 6.5 S FS DS D Static Drain to Source On-State Resistance R(on) I =5A, V=10V 320 420m DS D GS Input Capacitance Ciss 980 pF Output Capacitance Coss V =20V, f=1MHz 80 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 18 ns d Rise Time t 26 ns r See Fig.2 Turn-OFF Delay Time t (off) 44 ns d Fall Time t 31 ns f Total Gate Charge Qg 16 nC Gate to Source Charge Qgs V =125V, V =10V, I =10A 4.7 nC DS GS D Gate to Drain Miller Charge Qgd 4.6 nC Forward Diode Voltage V I =10A, V=0V 0.96 1.2V SD S GS Reverse Recovery Time t See Fig.3 130 ns rr Reverse Recovery Charge Q I =10A, V =0V, di/dt=100A/ s 540 nC rr S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2