X-On Electronics has gained recognition as a prominent supplier of NDDP010N25AZT4H MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDDP010N25AZT4H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDDP010N25AZT4H ON Semiconductor

NDDP010N25AZT4H electronic component of ON Semiconductor
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See Product Specifications
Part No.NDDP010N25AZT4H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NCH 10A 250V TP-FA(DPAK)
Datasheet: NDDP010N25AZT4H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 700
1 : USD 0.591
701 : USD 0.5304
N/A

Obsolete
0
MOQ : 700
Multiples : 700
700 : USD 0.5132
1400 : USD 0.4926
2800 : USD 0.4926
3500 : USD 0.4926
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8915
N/A

Obsolete
0

Multiples : 700
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.9801
10 : USD 1.5025
100 : USD 1.1219
700 : USD 0.9242
1400 : USD 0.7287
2100 : USD 0.7063
4900 : USD 0.6849
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NDDP010N25AZT4H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDDP010N25AZT4H and other electronic components in the MOSFETs category and beyond.

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NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m, N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value Unit 3 Drain to Source Voltage V 250V DSS V Gate to Source Voltage V 30 GSS A Drain Current (DC) I 10 D Packing Type:TL Marking Drain Current (Pulse) A I 40 DP PW 10s, duty cycle1% Power Dissipation 1 P W D Tc=25 C 52 10N25 Junction Temperature Tj 150 C TL AZ LOT No. 55 to Storage Temperature Tstg C +150 Source Current (Body Diode) I 10A S 1 mJ Avalanche Energy (Single Pulse) * E 15.5 AS 4 Lead Temperature for Soldering C 4 T 260 L Purposes, 3mm from Case for 10 Seconds 2 1 Thermal Resistance Ratings 3 1 Parameter Symbol Value Unit DPAK IPAK 2 3 Junction to Case Steady State R 2.40 JC C/W 2 Junction to Ambient * R 125 JA 1 Note : * V =50V, L=1mH, I =5A (Fig.1) DD AV 2 * Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Ordering & Package Information Device Package Shipping Memo DPAK(TP-FA), NDDP010N25AZT4H 700pcs. / reel Pb-Free SC-63, TO-252 and IPAK(TP), NDDP010N25AZ-1H 500pcs. / bag Halogen Free SC-64, TO-251 Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : November 2014 - Rev. 2 NDDP010N25AZ/D NDDP010N25AZ Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 250 V BR DSS D GS Zero-Gate Voltage Drain Current I V =250V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =24V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2.5 4.5V GS DS D Forward Transconductance g V =10V, I=5A 6.5 S FS DS D Static Drain to Source On-State Resistance R(on) I =5A, V=10V 320 420m DS D GS Input Capacitance Ciss 980 pF Output Capacitance Coss V =20V, f=1MHz 80 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 18 ns d Rise Time t 26 ns r See Fig.2 Turn-OFF Delay Time t (off) 44 ns d Fall Time t 31 ns f Total Gate Charge Qg 16 nC Gate to Source Charge Qgs V =125V, V =10V, I =10A 4.7 nC DS GS D Gate to Drain Miller Charge Qgd 4.6 nC Forward Diode Voltage V I =10A, V=0V 0.96 1.2V SD S GS Reverse Recovery Time t See Fig.3 130 ns rr Reverse Recovery Charge Q I =10A, V =0V, di/dt=100A/ s 540 nC rr S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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