NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 2.2 A 100% Rg Tested DSS DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 500 V 1.5 Compliant NChannel ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C D (2) Rating Symbol NDF NDD Unit DraintoSource Voltage V 500 V DSS Continuous Drain Current R I 5.5 4.7 A JC D (Note 1) G (1) Continuous Drain Current I 3.5 3 A D R , T = 100C (Note 1) JC A Pulsed Drain Current, V 10 V I 20 19 A GS DM S (3) Power Dissipation R P 30 83 W JC D GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy, I = E 130 mJ D AS 5.0 A ESD (HBM) (JESD22A114) V 3000 V esd RMS Isolation Voltage (t = 0.3 sec., V 4500 V ISO R.H. 30%, T = 25C) (Figure 17) A Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 Continuous Source Current I 5 A S 3 (Body Diode) NDF05N50ZG, Maximum Temperature for Soldering T 260 C L NDF05N50ZH Leads TO220FP CASE 221AH Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range 4 Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2 1 1 2. I = 4.4 A, di/dt 100 A/ s, V BV , T = +150C S DD DSS J 2 3 3 NDD05N50ZT4G NDD05N50Z1G DPAK IPAK CASE 369AA CASE 369D ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF05N50Z/DNDF05N50Z, NDD05N50Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDF05N50Z R 4.2 C/W JC NDD05N50Z 1.5 JunctiontoAmbient Steady State (Note 3) NDF05N50Z R 50 JA (Note 4) NDD05N50Z 38 (Note 3) NDD05N50Z1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size, (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage BV V = 0 V, I = 1 mA 500 V DSS GS D Breakdown Voltage Temperature Co- BV / Reference to 25C, 0.6 V/C DSS efficient T I = 1 mA J D DraintoSource Leakage Current I 25C 1 A DSS V = 500 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 5) Static DraintoSource R V = 10 V, I = 2.2 A 1.25 1.5 DS(on) GS D OnResistance Gate Threshold Voltage V V = V , I = 50 A 3.0 3.9 4.5 V GS(th) DS GS D Forward Transconductance g V = 15 V, I = 2.5 A 3.5 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) C 421 530 632 pF iss Output Capacitance (Note 6) C 50 68 80 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 8 15 25 rss (Note 6) nC Total Gate Charge (Note 6) Q 9 18.5 28 g GatetoSource Charge (Note 6) Q 2 4 6 gs V = 250 V, I = 5 A, DD D GatetoDrain (Miller) Charge Q 5 10 15 gd V = 10 V GS (Note 6) Plateau Voltage V 6.5 V GP Gate Resistance R 1.5 4.5 8 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 11 ns d(on) Rise Time t 15 r V = 250 V, I = 5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 24 d(off) Fall Time t 14 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage V I = 5 A, V = 0 V 1.6 V SD S GS Reverse Recovery Time t 255 ns rr V = 0 V, V = 30 V GS DD I = 5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 1.25 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width 380 s, Duty Cycle 2%. 6. Guaranteed by design. www.onsemi.com 2