X-On Electronics has gained recognition as a prominent supplier of NDF10N62ZG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDF10N62ZG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDF10N62ZG ON Semiconductor

NDF10N62ZG electronic component of ON Semiconductor
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Part No.NDF10N62ZG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Single N-Ch 620V 5.7A, 10A
Datasheet: NDF10N62ZG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.963 ea
Line Total: USD 48.15 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8518
25 : USD 1.464

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 50
Multiples : 1
50 : USD 0.963
100 : USD 0.861
250 : USD 0.759

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 18
Multiples : 1
18 : USD 1.8518
25 : USD 1.464

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDF10N62ZG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDF10N62ZG and other electronic components in the MOSFETs category and beyond.

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NDF10N62Z N-Channel Power MOSFET 620 V, 0.75 Features Low ON Resistance Low Gate Charge NDF10N62Z THERMAL RESISTANCE Parameter Symbol NDF10N62Z Unit Junction toCase (Drain) R 3.4 C/W JC JunctiontoAmbient Steady State (Note 4) R 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 620 V GS D DSS Breakdown Voltage Temperature Reference to 25C, BV / 0.6 V/C DSS Coefficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 620 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 5) Static DraintoSource V = 10 V, I = 5.0 A R 0.65 0.75 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 100 A V 3.0 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 10 A g 7.9 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1425 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 150 oss f = 1.0 MHz Reverse Transfer Capacitance C 35 rss Total Gate Charge Q 47 nC g GatetoSource Charge Q 9.3 gs V = 310 V, I = 10 A, DD D V = 10 V GS GatetoDrain (Miller) Charge Q 25 gd Plateau Voltage V 6.4 V gp Gate Resistance R 1.5 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 31 r V = 310 V, I = 10 A, DD D V = 10 V, R = 5 GS G Turn Off Delay Time t 40 d(off) Fall Time t 21 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 395 ns rr V = 0 V, V = 30 V GS DD I = 10 A, di/dt = 100 A/ s Reverse Recovery Charge S Q 3.0 C rr 4. Insertion mounted 5. Pulse Width 380 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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