NDPL100N10B Power MOSFET www.onsemi.com 100V, 7.2m, 100A, N-Channel Features Low On-Resistance V R (on) Max I DSS DS D Max Low Gate Charge 7.2 m 15V High Speed Switching 100V 100A 8.7 m 10V 100% Avalanche Tested Pb-Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C 2 Parameter Symbol Value Unit Drain to Source Voltage V 100V DSS Gate to Source Voltage V 20 V 1:Gate GSS 2:Drain 1 Drain Current (DC) I 100A D 3:Source Drain Current (Pulse) I 400 DP A PW10s, duty cycle1% 3 Power Dissipation 2.1 P W D Tc=25C 110 Tj 175 C Junction Temperature Marking Tstg 55 to +175 C Storage Temperature Source Current (Body Diode) I 100 A S 1 Avalanche Energy (Single Pulse) * E 147mJ AS Lead Temperature for Soldering 100N10 C T 260 L Purposes, 3mm from Case for 10 Seconds LOTNo. B Thermal Resistance Ratings 1 TO-220-3L 2 Parameter Symbol Value Unit 3 Junction to Case Steady State R 1.36 JC C/W 2 Junction to Ambient * R 71.4 JA 1 Note : * V =48V, L=100H, I =40A (Fig.1) DD AV 2 * Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 1 NDPL100N10B/D NDPL100N10B Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =20V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =10V, I=50A 75 S FS DS D R(on)1 I =50A, V=15V 6.0 7.2m DS D GS Static Drain to Source On-State Resistance R(on)2 I =50A, V=10V 6.7 8.7m DS D GS Input Capacitance Ciss 2,950 pF Output Capacitance Coss V =50V, f=1MHz 1,250 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 40 ns d Rise Time t 385 ns r See Fig.2 Turn-OFF Delay Time t (off) 68 ns d Fall Time t 52 ns f Total Gate Charge Qg 35 nC Gate to Source Charge Qgs V =48V, V =10V, I =100A 13 nC DS GS D Gate to Drain Miller Charge Qgd 10 nC Forward Diode Voltage V I =100A, V=0V 1.1 1.5V SD S GS Reverse Recovery Time t 130 ns rr See Fig.3 Reverse Recovery Charge I =100A, V =0V, V =50V, di/dt=100A/s Q S GS DD 400 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit D L 50 G NDPL100N10B S 10V V 50 DD 0V Fig.3 Reverse Recovery Time Test Circuit D NDPL100N10B L G S V DD DriverMOSFET www.onsemi.com 2