July 1996 NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field N-Channel 5.3A, 30V, R =0.035 V =10V. DS(ON) GS effect transistors are produced using Fairchild s proprietary, P-Channel -4.0A, -30V, R =0.065 V =-10V. DS(ON) GS high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design or extremely low R . DS(ON) and provide superior switching performance. These devices are particularly suited for low voltage applications such as High power and current handling capability in a widely used notebook computer power management and other battery surface mount package. powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Dual (N & P-Channel) MOSFET in surface mount package. 4 5 3 6 7 2 1 8 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units Drain-Source Voltage 30 -30 V V DSS V Gate-Source Voltage 20 -20 V GSS I Drain Current - Continuous (Note 1a) 5.3 -4 A D - Pulsed 20 -15 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC NDS8958 Rev. CElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A N-Ch 30 V DSS GS D V = 0 V, I = -250 A P-Ch -30 V GS D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V N-Ch 1 A DSS DS GS T = 55C 10 A J V = -24 V, V = 0 V P-Ch -1 A DS GS T = 55C -10 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V All 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V All -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 A N-Ch 1 1.6 2.8 V GS(th) DS GS D T = 125C 0.7 1.2 2.2 J V = V , I = -250 A P-Ch -1 -1.6 -2.8 DS GS D T = 125C -0.7 -1.2 -2.2 J R Static Drain-Source On-Resistance V = 10 V, I = 5.3 A N-Ch 0.033 0.035 DS(ON) GS D T = 125C 0.046 0.063 J V = 4.5 V, I = 4.4 A 0.046 0.05 GS D V = -10 V, I = -4.0 A P-Ch 0.052 0.065 GS D 0.075 0.13 T = 125C J V = -4.5 V, I = -3.3 A 0.085 0.1 GS D I On-State Drain Current V = 10 V, V = 5 V N-Ch 20 A D(on) GS DS V = -10 V, V = -5 V P-Ch -15 GS DS g Forward Transconductance V = 10 V, I = 5.3 A N-Ch 10.5 S FS DS D V = -10 V, I = -4.0 A P-Ch 7 DS D DYNAMIC CHARACTERISTICS C Input Capacitance N-Channel N-Ch 720 pF iss V = 15 V, V = 0 V, DS GS P-Ch 690 f = 1.0 MHz C Output Capacitance N-Ch 370 pF oss P-Channel P-Ch 430 V = -15 V, V = 0 V, DS GS Reverse Transfer Capacitance N-Ch 250 pF C f = 1.0 MHz rss P-Ch 160 NDS8958 Rev. C